BSM25GD120DN2E3224BOSA1
For Reference Only
| Part Number | BSM25GD120DN2E3224BOSA1 |
| PNEDA Part # | BSM25GD120DN2E3224BOSA1 |
| Description | IGBT 2 LOW POWER ECONO2-2 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 8,010 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 18 - Jun 23 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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BSM25GD120DN2E3224BOSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | BSM25GD120DN2E3224BOSA1 |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Modules |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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BSM25GD120DN2E3224BOSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | - |
| IGBT Type | - |
| Configuration | Three Phase Inverter |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | 35A |
| Power - Max | 200W |
| Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 25A |
| Current - Collector Cutoff (Max) | 800µA |
| Input Capacitance (Cies) @ Vce | 1.65nF @ 25V |
| Input | Standard |
| NTC Thermistor | No |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | Module |
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Manufacturer Microsemi Corporation Series - IGBT Type Trench Field Stop Configuration Half Bridge Voltage - Collector Emitter Breakdown (Max) 1700V Current - Collector (Ic) (Max) 150A Power - Max 560W Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 100A Current - Collector Cutoff (Max) 250µA Input Capacitance (Cies) @ Vce 9nF @ 25V Input Standard NTC Thermistor Yes Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Package / Case SP4 Supplier Device Package SP4 |
