Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

BSO052N03S

BSO052N03S

For Reference Only

Part Number BSO052N03S
PNEDA Part # BSO052N03S
Description MOSFET N-CH 30V 14A 8DSO
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,686
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 17 - May 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSO052N03S Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSO052N03S
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BSO052N03S, BSO052N03S Datasheet (Total Pages: 9, Size: 652.21 KB)
PDFBSO052N03S Datasheet Cover
BSO052N03S Datasheet Page 2 BSO052N03S Datasheet Page 3 BSO052N03S Datasheet Page 4 BSO052N03S Datasheet Page 5 BSO052N03S Datasheet Page 6 BSO052N03S Datasheet Page 7 BSO052N03S Datasheet Page 8 BSO052N03S Datasheet Page 9

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • BSO052N03S Datasheet
  • where to find BSO052N03S
  • Infineon Technologies

  • Infineon Technologies BSO052N03S
  • BSO052N03S PDF Datasheet
  • BSO052N03S Stock

  • BSO052N03S Pinout
  • Datasheet BSO052N03S
  • BSO052N03S Supplier

  • Infineon Technologies Distributor
  • BSO052N03S Price
  • BSO052N03S Distributor

BSO052N03S Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C14A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs5.2mOhm @ 17A, 10V
Vgs(th) (Max) @ Id2V @ 70µA
Gate Charge (Qg) (Max) @ Vgs43nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5530pF @ 15V
FET Feature-
Power Dissipation (Max)1.56W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-DSO-8
Package / Case8-SOIC (0.154", 3.90mm Width)

The Products You May Be Interested In

SIHF5N50D-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

5.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.5Ohm @ 2.5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

325pF @ 100V

FET Feature

-

Power Dissipation (Max)

30W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220 Full Pack

Package / Case

TO-220-3 Full Pack

APT14F100B

Microsemi

Manufacturer

Microsemi Corporation

Series

POWER MOS 8™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

14A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

980mOhm @ 7A, 10V

Vgs(th) (Max) @ Id

5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

120nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

3965pF @ 25V

FET Feature

-

Power Dissipation (Max)

500W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247 [B]

Package / Case

TO-247-3

Manufacturer

Nexperia USA Inc.

Series

Automotive, AEC-Q101, TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

8.1mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

108nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7380pF @ 25V

FET Feature

-

Power Dissipation (Max)

263W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

NTP8G202NG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

8V

Rds On (Max) @ Id, Vgs

350mOhm @ 5.5A, 8V

Vgs(th) (Max) @ Id

2.6V @ 500µA

Gate Charge (Qg) (Max) @ Vgs

9.3nC @ 4.5V

Vgs (Max)

±18V

Input Capacitance (Ciss) (Max) @ Vds

760pF @ 400V

FET Feature

-

Power Dissipation (Max)

65W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

IRF6665

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

4.2A (Ta), 19A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

62mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

13nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

530pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.2W (Ta), 42W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DIRECTFET™ SH

Package / Case

DirectFET™ Isometric SH

Recently Sold

S34ML02G104TFI010

S34ML02G104TFI010

SkyHigh Memory Limited

IC FLASH 2G PARALLEL 48TSOP I

MC14040BDR2G

MC14040BDR2G

ON Semiconductor

IC COUNTER 12BIT CMOS 16SOIC

ADG1606BCPZ-REEL7

ADG1606BCPZ-REEL7

Analog Devices

IC MULTIPLEXER 1X16 32LFCSP

BZV55C4V7

BZV55C4V7

Microsemi

DIODE ZENER 4.7V DO213AA

0452007.MRL

0452007.MRL

Littelfuse

FUSE BRD MNT 7A 72VAC 60VDC 2SMD

LT3080EST#PBF

LT3080EST#PBF

Linear Technology/Analog Devices

IC REG LIN POS ADJ 1.1A SOT223-3

S29GL256P11FFIV10

S29GL256P11FFIV10

Cypress Semiconductor

IC FLASH 256M PARALLEL 64FBGA

IS62WV51216BLL-55TLI

IS62WV51216BLL-55TLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 8M PARALLEL 44TSOP II

LTC1760IFW#PBF

LTC1760IFW#PBF

Linear Technology/Analog Devices

IC MANAGER BATTERY DUAL 48TSSOP

MC33074DR2G

MC33074DR2G

ON Semiconductor

IC OPAMP GP 4 CIRCUIT 14SOIC

MAX14780EESA+T

MAX14780EESA+T

Maxim Integrated

IC TRANSCEIVER HALF 1/1 8SOIC

PMBT3904VS,115

PMBT3904VS,115

Nexperia

TRANS 2NPN 40V 0.2A SOT666