BSO615CGHUMA1
For Reference Only
| Part Number | BSO615CGHUMA1 |
| PNEDA Part # | BSO615CGHUMA1 |
| Description | MOSFET N/P-CH 60V 3.1A/2A 8SOIC |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 50,454 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 15 - May 20 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
BSO615CGHUMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
|
| Mfr. Part Number | BSO615CGHUMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- BSO615CGHUMA1 Datasheet
- where to find BSO615CGHUMA1
- Infineon Technologies
- Infineon Technologies BSO615CGHUMA1
- BSO615CGHUMA1 PDF Datasheet
- BSO615CGHUMA1 Stock
- BSO615CGHUMA1 Pinout
- Datasheet BSO615CGHUMA1
- BSO615CGHUMA1 Supplier
- Infineon Technologies Distributor
- BSO615CGHUMA1 Price
- BSO615CGHUMA1 Distributor
BSO615CGHUMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | SIPMOS® |
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 3.1A, 2A |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 3.1A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 20µA |
| Gate Charge (Qg) (Max) @ Vgs | 22.5nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 380pF @ 25V |
| Power - Max | 2W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | PG-DSO-8 |
The Products You May Be Interested In
|
Manufacturer Diodes Incorporated Series - FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 12.2A (Ta) Rds On (Max) @ Id, Vgs 9.5mOhm @ 10A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 2248pF @ 10V Power - Max 2.1W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 4-VFDFN Exposed Pad Supplier Device Package V-DFN2050-4 |
Manufacturer Infineon Technologies Series HEXFET® FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 3.6A Rds On (Max) @ Id, Vgs 73mOhm @ 2.2A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 660pF @ 25V Power - Max 2W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
Manufacturer EPC Series - FET Type 2 N-Channel (Half Bridge) FET Feature GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 16A (Ta) Rds On (Max) @ Id, Vgs 19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V Vgs(th) (Max) @ Id 2.5V @ 5mA Gate Charge (Qg) (Max) @ Vgs 2.2nC @ 5V, 5.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 230pF @ 15V, 590pF @ 15V Power - Max - Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case Die Supplier Device Package Die |
Manufacturer Microsemi Corporation Series - FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 39A Rds On (Max) @ Id, Vgs 70mOhm @ 39A, 10V Vgs(th) (Max) @ Id 3.9V @ 2.7mA Gate Charge (Qg) (Max) @ Vgs 259nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 7000pF @ 25V Power - Max 250W Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Package / Case SP3 Supplier Device Package SP3 |
Manufacturer Taiwan Semiconductor Corporation Series - FET Type 2 P-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 7.1A (Ta) Rds On (Max) @ Id, Vgs 25mOhm @ 7.1A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 15V Power - Max 2W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SOP |
