Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

BSP179H6327XTSA1

BSP179H6327XTSA1

For Reference Only

Part Number BSP179H6327XTSA1
PNEDA Part # BSP179H6327XTSA1
Description MOSFET N-CH 400V 0.21A SOT-223
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,082
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 19 - May 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSP179H6327XTSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSP179H6327XTSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • BSP179H6327XTSA1 Datasheet
  • where to find BSP179H6327XTSA1
  • Infineon Technologies

  • Infineon Technologies BSP179H6327XTSA1
  • BSP179H6327XTSA1 PDF Datasheet
  • BSP179H6327XTSA1 Stock

  • BSP179H6327XTSA1 Pinout
  • Datasheet BSP179H6327XTSA1
  • BSP179H6327XTSA1 Supplier

  • Infineon Technologies Distributor
  • BSP179H6327XTSA1 Price
  • BSP179H6327XTSA1 Distributor

BSP179H6327XTSA1 Specifications

ManufacturerInfineon Technologies
SeriesSIPMOS®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)400V
Current - Continuous Drain (Id) @ 25°C210mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)0V, 10V
Rds On (Max) @ Id, Vgs18Ohm @ 210mA, 10V
Vgs(th) (Max) @ Id1V @ 94µA
Gate Charge (Qg) (Max) @ Vgs6.8nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds135pF @ 25V
FET FeatureDepletion Mode
Power Dissipation (Max)1.8W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-SOT223-4
Package / CaseTO-261-4, TO-261AA

The Products You May Be Interested In

TK72A12N1,S4X

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSVIII-H

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

120V

Current - Continuous Drain (Id) @ 25°C

72A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4.5mOhm @ 36A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

130nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

8100pF @ 60V

FET Feature

-

Power Dissipation (Max)

45W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220SIS

Package / Case

TO-220-3 Full Pack

IPD031N03M G

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

90A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3.1mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

51nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5300pF @ 15V

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-3

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

DMP4015SK3-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

14A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

11mOhm @ 9.8A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

47.5nC @ 5V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

4234pF @ 20V

FET Feature

-

Power Dissipation (Max)

3.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252, (D-Pak)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

FDMS8560S

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®, SyncFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

30A (Ta), 70A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.8mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

68nC @ 10V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

4350pF @ 13V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 65W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-PQFN (5x6)

Package / Case

8-PowerTDFN

IPD80R3K3P7ATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™ P7

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

1.9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3.3Ohm @ 590mA, 10V

Vgs(th) (Max) @ Id

3.5V @ 30µA

Gate Charge (Qg) (Max) @ Vgs

5.8nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

120pF @ 500V

FET Feature

-

Power Dissipation (Max)

18W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-3

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Recently Sold

0466005.NRHF

0466005.NRHF

Littelfuse

FUSE BOARD MNT 5A 32VAC/VDC 1206

MCR22-8G

MCR22-8G

ON Semiconductor

THYRISTOR SCR 1.5A 600V TO-92

IS43TR16128CL-125KBLI

IS43TR16128CL-125KBLI

ISSI, Integrated Silicon Solution Inc

IC DRAM 2G PARALLEL 96TWBGA

ARF444

ARF444

Microsemi

PWR MOSFET RF N-CH 900V TO-247AD

APT1608F3C

APT1608F3C

Kingbright

EMITTER IR 940NM 50MA 603

PMV65XP,215

PMV65XP,215

Nexperia

MOSFET P-CH 20V 2.8A SOT-23

LTC2943IDD

LTC2943IDD

Linear Technology/Analog Devices

IC SUPERVISOR

J111

J111

ON Semiconductor

JFET N-CH 35V 625MW TO92

ADF4113BRU

ADF4113BRU

Analog Devices

IC SYNTH PLL RF 4.0GHZ 16-TSSOP

STM32L433CCU6

STM32L433CCU6

STMicroelectronics

IC MCU 32BIT 256KB FLASH 48QFPN

74FCT3807SOGI

74FCT3807SOGI

IDT, Integrated Device Technology

IC CLK BUFFER 1:10 100MHZ 20SOIC

BH1726NUC-E2

BH1726NUC-E2

Rohm Semiconductor

SENSOR OPT AMBIENT WSON008X2120