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BSP298L6327HUSA1

BSP298L6327HUSA1

For Reference Only

Part Number BSP298L6327HUSA1
PNEDA Part # BSP298L6327HUSA1
Description MOSFET N-CH 400V 500MA SOT-223
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,534
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSP298L6327HUSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSP298L6327HUSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BSP298L6327HUSA1, BSP298L6327HUSA1 Datasheet (Total Pages: 10, Size: 373.1 KB)
PDFBSP298L6327HUSA1 Datasheet Cover
BSP298L6327HUSA1 Datasheet Page 2 BSP298L6327HUSA1 Datasheet Page 3 BSP298L6327HUSA1 Datasheet Page 4 BSP298L6327HUSA1 Datasheet Page 5 BSP298L6327HUSA1 Datasheet Page 6 BSP298L6327HUSA1 Datasheet Page 7 BSP298L6327HUSA1 Datasheet Page 8 BSP298L6327HUSA1 Datasheet Page 9 BSP298L6327HUSA1 Datasheet Page 10

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BSP298L6327HUSA1 Specifications

ManufacturerInfineon Technologies
SeriesSIPMOS®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)400V
Current - Continuous Drain (Id) @ 25°C500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds400pF @ 25V
FET Feature-
Power Dissipation (Max)1.8W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-SOT223-4
Package / CaseTO-261-4, TO-261AA

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