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BSP300L6327HUSA1

BSP300L6327HUSA1

For Reference Only

Part Number BSP300L6327HUSA1
PNEDA Part # BSP300L6327HUSA1
Description MOSFET N-CH 800V 190MA SOT-223
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,472
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSP300L6327HUSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSP300L6327HUSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BSP300L6327HUSA1, BSP300L6327HUSA1 Datasheet (Total Pages: 9, Size: 329.44 KB)
PDFBSP300L6327HUSA1 Datasheet Cover
BSP300L6327HUSA1 Datasheet Page 2 BSP300L6327HUSA1 Datasheet Page 3 BSP300L6327HUSA1 Datasheet Page 4 BSP300L6327HUSA1 Datasheet Page 5 BSP300L6327HUSA1 Datasheet Page 6 BSP300L6327HUSA1 Datasheet Page 7 BSP300L6327HUSA1 Datasheet Page 8 BSP300L6327HUSA1 Datasheet Page 9

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BSP300L6327HUSA1 Specifications

ManufacturerInfineon Technologies
SeriesSIPMOS®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C190mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs20Ohm @ 190mA, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds230pF @ 25V
FET Feature-
Power Dissipation (Max)1.8W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-SOT223-4
Package / CaseTO-261-4, TO-261AA

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