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BSP315PL6327HTSA1

BSP315PL6327HTSA1

For Reference Only

Part Number BSP315PL6327HTSA1
PNEDA Part # BSP315PL6327HTSA1
Description MOSFET P-CH 60V 1.17A SOT-223
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,624
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 30 - May 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSP315PL6327HTSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSP315PL6327HTSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BSP315PL6327HTSA1, BSP315PL6327HTSA1 Datasheet (Total Pages: 9, Size: 83.79 KB)
PDFBSP315PL6327HTSA1 Datasheet Cover
BSP315PL6327HTSA1 Datasheet Page 2 BSP315PL6327HTSA1 Datasheet Page 3 BSP315PL6327HTSA1 Datasheet Page 4 BSP315PL6327HTSA1 Datasheet Page 5 BSP315PL6327HTSA1 Datasheet Page 6 BSP315PL6327HTSA1 Datasheet Page 7 BSP315PL6327HTSA1 Datasheet Page 8 BSP315PL6327HTSA1 Datasheet Page 9

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BSP315PL6327HTSA1 Specifications

ManufacturerInfineon Technologies
SeriesSIPMOS®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C1.17A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs800mOhm @ 1.17A, 10V
Vgs(th) (Max) @ Id2V @ 160µA
Gate Charge (Qg) (Max) @ Vgs7.8nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds160pF @ 25V
FET Feature-
Power Dissipation (Max)1.8W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-SOT223-4
Package / CaseTO-261-4, TO-261AA

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