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BSP316PE6327T

BSP316PE6327T

For Reference Only

Part Number BSP316PE6327T
PNEDA Part # BSP316PE6327T
Description MOSFET P-CH 100V 0.68A SOT223
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,184
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSP316PE6327T Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSP316PE6327T
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BSP316PE6327T, BSP316PE6327T Datasheet (Total Pages: 8, Size: 82.69 KB)
PDFBSP316PL6327HTSA1 Datasheet Cover
BSP316PL6327HTSA1 Datasheet Page 2 BSP316PL6327HTSA1 Datasheet Page 3 BSP316PL6327HTSA1 Datasheet Page 4 BSP316PL6327HTSA1 Datasheet Page 5 BSP316PL6327HTSA1 Datasheet Page 6 BSP316PL6327HTSA1 Datasheet Page 7 BSP316PL6327HTSA1 Datasheet Page 8

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BSP316PE6327T Specifications

ManufacturerInfineon Technologies
SeriesSIPMOS®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C680mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.8Ohm @ 680mA, 10V
Vgs(th) (Max) @ Id2V @ 170µA
Gate Charge (Qg) (Max) @ Vgs6.4nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds146pF @ 25V
FET Feature-
Power Dissipation (Max)1.8W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-SOT223-4
Package / CaseTO-261-4, TO-261AA

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