Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

BSS119NH6327XTSA1

BSS119NH6327XTSA1

For Reference Only

Part Number BSS119NH6327XTSA1
PNEDA Part # BSS119NH6327XTSA1
Description MOSFET N-CH 100V 0.19A SOT-23
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 235,680
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSS119NH6327XTSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSS119NH6327XTSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • BSS119NH6327XTSA1 Datasheet
  • where to find BSS119NH6327XTSA1
  • Infineon Technologies

  • Infineon Technologies BSS119NH6327XTSA1
  • BSS119NH6327XTSA1 PDF Datasheet
  • BSS119NH6327XTSA1 Stock

  • BSS119NH6327XTSA1 Pinout
  • Datasheet BSS119NH6327XTSA1
  • BSS119NH6327XTSA1 Supplier

  • Infineon Technologies Distributor
  • BSS119NH6327XTSA1 Price
  • BSS119NH6327XTSA1 Distributor

BSS119NH6327XTSA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C190mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs6Ohm @ 190mA, 10V
Vgs(th) (Max) @ Id2.3V @ 13µA
Gate Charge (Qg) (Max) @ Vgs0.6nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds20.9pF @ 25V
FET Feature-
Power Dissipation (Max)500mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3
Package / CaseTO-236-3, SC-59, SOT-23-3

The Products You May Be Interested In

FDU6512A

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

10.7A (Ta), 36A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

21mOhm @ 10.7A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

19nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

1082pF @ 10V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 43W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

TSM7NC60CF C0G

Taiwan Semiconductor Corporation

Manufacturer

Taiwan Semiconductor Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.2Ohm @ 2A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

24nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1169pF @ 50V

FET Feature

-

Power Dissipation (Max)

44.6W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ITO-220S

Package / Case

TO-220-3 Full Pack

TK20A60W5,S5VX

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

DTMOSIV

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

20A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

175mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

4.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

55nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1800pF @ 300V

FET Feature

-

Power Dissipation (Max)

45W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220SIS

Package / Case

TO-220-3 Full Pack

IRFR540ZPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

35A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

28.5mOhm @ 21A, 10V

Vgs(th) (Max) @ Id

4V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

59nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1690pF @ 25V

FET Feature

-

Power Dissipation (Max)

91W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

ZVN2106A

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

450mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2Ohm @ 1A, 10V

Vgs(th) (Max) @ Id

2.4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

75pF @ 18V

FET Feature

-

Power Dissipation (Max)

700mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-92-3

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Recently Sold

ABM8G-28.63636MHZ-18-D2Y-T

ABM8G-28.63636MHZ-18-D2Y-T

Abracon

CRYSTAL 28.63636MHZ 18PF SMD

BYW80-200G

BYW80-200G

ON Semiconductor

DIODE GEN PURP 200V 8A TO220-2

MAX1490BEPG+

MAX1490BEPG+

Maxim Integrated

IC TRANSCEIVER FULL 1/1 24DIP

1N4148WT

1N4148WT

ON Semiconductor

DIODE GEN PURP 75V 200MA SOD523F

PMBT3904VS,115

PMBT3904VS,115

Nexperia

TRANS 2NPN 40V 0.2A SOT666

ADP122AUJZ-3.3-R7

ADP122AUJZ-3.3-R7

Analog Devices

IC REG LINEAR 3.3V 300MA TSOT5

MCP6566UT-E/OT

MCP6566UT-E/OT

Microchip Technology

IC COMPARATOR O-D 1.8V SOT23-5

TVS4201MR6T1G

TVS4201MR6T1G

ON Semiconductor

TVS DIODE 5V 12V 6TSOP

MURS160T3G

MURS160T3G

ON Semiconductor

DIODE GEN PURP 600V 2A SMB

WM8962ECSN/R

WM8962ECSN/R

Cirrus Logic Inc.

IC CODEC STER 49WCSP

MCP73833-FCI/UN

MCP73833-FCI/UN

Microchip Technology

IC LI-ION/LI-POLY CTRLR 10MSOP

MT29F2G08ABAEAWP-IT:E

MT29F2G08ABAEAWP-IT:E

Micron Technology Inc.

IC FLASH 2G PARALLEL 48TSOP I