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BSS123LT1G

BSS123LT1G BSS123LT1G

For Reference Only

Part Number BSS123LT1G
PNEDA Part # BSS123LT1G
Description MOSFET N-CH 100V 170MA SOT-23
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 1,422,978
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jul 9 - Jul 14 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSS123LT1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberBSS123LT1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BSS123LT1G, BSS123LT1G Datasheet (Total Pages: 6, Size: 176.14 KB)
PDFBVSS123LT1G Datasheet Cover
BVSS123LT1G Datasheet Page 2 BVSS123LT1G Datasheet Page 3 BVSS123LT1G Datasheet Page 4 BVSS123LT1G Datasheet Page 5 BVSS123LT1G Datasheet Page 6

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BSS123LT1G Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs6Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds20pF @ 25V
FET Feature-
Power Dissipation (Max)225mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3 (TO-236)
Package / CaseTO-236-3, SC-59, SOT-23-3

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