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BSS225L6327HTSA1

BSS225L6327HTSA1

For Reference Only

Part Number BSS225L6327HTSA1
PNEDA Part # BSS225L6327HTSA1
Description MOSFET N-CH 600V 0.09A SOT-89
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,120
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 2 - May 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSS225L6327HTSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSS225L6327HTSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BSS225L6327HTSA1, BSS225L6327HTSA1 Datasheet (Total Pages: 9, Size: 295.62 KB)
PDFBSS225L6327HTSA1 Datasheet Cover
BSS225L6327HTSA1 Datasheet Page 2 BSS225L6327HTSA1 Datasheet Page 3 BSS225L6327HTSA1 Datasheet Page 4 BSS225L6327HTSA1 Datasheet Page 5 BSS225L6327HTSA1 Datasheet Page 6 BSS225L6327HTSA1 Datasheet Page 7 BSS225L6327HTSA1 Datasheet Page 8 BSS225L6327HTSA1 Datasheet Page 9

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BSS225L6327HTSA1 Specifications

ManufacturerInfineon Technologies
SeriesSIPMOS®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C90mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs45Ohm @ 90mA, 10V
Vgs(th) (Max) @ Id2.3V @ 94µA
Gate Charge (Qg) (Max) @ Vgs5.8nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds131pF @ 25V
FET Feature-
Power Dissipation (Max)1W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-SOT89
Package / CaseTO-243AA

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