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BSS670S2LL6327HTSA1

BSS670S2LL6327HTSA1

For Reference Only

Part Number BSS670S2LL6327HTSA1
PNEDA Part # BSS670S2LL6327HTSA1
Description MOSFET N-CH 55V 540MA SOT-23
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,004
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 30 - May 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSS670S2LL6327HTSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSS670S2LL6327HTSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BSS670S2LL6327HTSA1, BSS670S2LL6327HTSA1 Datasheet (Total Pages: 8, Size: 116.32 KB)
PDFBSS670S2LL6327HTSA1 Datasheet Cover
BSS670S2LL6327HTSA1 Datasheet Page 2 BSS670S2LL6327HTSA1 Datasheet Page 3 BSS670S2LL6327HTSA1 Datasheet Page 4 BSS670S2LL6327HTSA1 Datasheet Page 5 BSS670S2LL6327HTSA1 Datasheet Page 6 BSS670S2LL6327HTSA1 Datasheet Page 7 BSS670S2LL6327HTSA1 Datasheet Page 8

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BSS670S2LL6327HTSA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C540mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs650mOhm @ 270mA, 10V
Vgs(th) (Max) @ Id2V @ 2.7µA
Gate Charge (Qg) (Max) @ Vgs2.26nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds75pF @ 25V
FET Feature-
Power Dissipation (Max)360mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3
Package / CaseTO-236-3, SC-59, SOT-23-3

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