BSZ0910NDXTMA1
For Reference Only
| Part Number | BSZ0910NDXTMA1 |
| PNEDA Part # | BSZ0910NDXTMA1 |
| Description | DIFFERENTIATED MOSFETS |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 2,268 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 19 - Jun 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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BSZ0910NDXTMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | BSZ0910NDXTMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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BSZ0910NDXTMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate, 4.5V Drive |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 9.5A (Ta), 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.5mOhm @ 9A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 5.6nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 800pF @ 15V |
| Power - Max | 1.9W (Ta), 31W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | PG-WISON-8 |
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Manufacturer Renesas Electronics America Series - FET Type 2 P-Channel (Dual) FET Feature Logic Level Gate, 1.8V Drive Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 2.5A (Ta) Rds On (Max) @ Id, Vgs 130mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 1.9nC @ 4V Input Capacitance (Ciss) (Max) @ Vds 220pF @ 10V Power - Max 1.15W (Ta) Operating Temperature 150°C Mounting Type Surface Mount Package / Case SC-95 Supplier Device Package SC-95 |
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