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BSZ120P03NS3EGATMA1

BSZ120P03NS3EGATMA1

For Reference Only

Part Number BSZ120P03NS3EGATMA1
PNEDA Part # BSZ120P03NS3EGATMA1
Description MOSFET P-CH 30V 40A TSDSON-8
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,564
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 20 - Jun 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSZ120P03NS3EGATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSZ120P03NS3EGATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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BSZ120P03NS3EGATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C11A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs12mOhm @ 20A, 10V
Vgs(th) (Max) @ Id3.1V @ 73µA
Gate Charge (Qg) (Max) @ Vgs45nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds3360pF @ 15V
FET Feature-
Power Dissipation (Max)2.1W (Ta), 52W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TSDSON-8
Package / Case8-PowerTDFN

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