BTS244ZE3062AATMA2
For Reference Only
| Part Number | BTS244ZE3062AATMA2 |
| PNEDA Part # | BTS244ZE3062AATMA2 |
| Description | MOSFET N-CH 55V 35A TO220-5 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 8,028 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 25 - Jun 30 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
BTS244ZE3062AATMA2 Resources
| Brand | Infineon Technologies |
| ECAD Module |
|
| Mfr. Part Number | BTS244ZE3062AATMA2 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- BTS244ZE3062AATMA2 Datasheet
- where to find BTS244ZE3062AATMA2
- Infineon Technologies
- Infineon Technologies BTS244ZE3062AATMA2
- BTS244ZE3062AATMA2 PDF Datasheet
- BTS244ZE3062AATMA2 Stock
- BTS244ZE3062AATMA2 Pinout
- Datasheet BTS244ZE3062AATMA2
- BTS244ZE3062AATMA2 Supplier
- Infineon Technologies Distributor
- BTS244ZE3062AATMA2 Price
- BTS244ZE3062AATMA2 Distributor
BTS244ZE3062AATMA2 Specifications
| Manufacturer | Infineon Technologies |
| Series | TEMPFET® |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 19A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 130µA |
| Gate Charge (Qg) (Max) @ Vgs | 130nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2660pF @ 25V |
| FET Feature | Temperature Sensing Diode |
| Power Dissipation (Max) | 170W (Tc) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-5-2 |
| Package / Case | TO-263-5, D²Pak (4 Leads + Tab), TO-263BB |
The Products You May Be Interested In
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 60A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.9mOhm @ 23.6A, 10V Vgs(th) (Max) @ Id 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs 160nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 7000pF @ 15V FET Feature - Power Dissipation (Max) 5.2W (Ta), 125W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 10-PolarPAK® (L) Package / Case 10-PolarPAK® (L) |
Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4V Rds On (Max) @ Id, Vgs 70mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 5.6nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 405pF @ 6V FET Feature - Power Dissipation (Max) 1W (Ta) Operating Temperature - Mounting Type Surface Mount Supplier Device Package SC-70FL/MCPH3 Package / Case 3-SMD, Flat Leads |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 13A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 5.5mOhm @ 20A, 10V Vgs(th) (Max) @ Id 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs 25nC @ 4.5V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 1.7W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8 |
Manufacturer ON Semiconductor Series PowerTrench® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 16A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 6mOhm @ 16A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 56nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3888pF @ 15V FET Feature - Power Dissipation (Max) 2.5W (Ta) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SOIC Package / Case 8-SOIC (0.154", 3.90mm Width) |
Manufacturer Alpha & Omega Semiconductor Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 12A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 9mOhm @ 20A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1920pF @ 20V FET Feature - Power Dissipation (Max) 2.1W (Ta), 60W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package UltraSO-8™ Package / Case 3-PowerSMD, Flat Leads |
