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BTS282Z E3180A

BTS282Z E3180A

For Reference Only

Part Number BTS282Z E3180A
PNEDA Part # BTS282Z-E3180A
Description MOSFET N-CH 49V 80A TO-220-7
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,048
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BTS282Z E3180A Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBTS282Z E3180A
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BTS282Z E3180A, BTS282Z E3180A Datasheet (Total Pages: 12, Size: 270.91 KB)
PDFBTS282Z E3230 Datasheet Cover
BTS282Z E3230 Datasheet Page 2 BTS282Z E3230 Datasheet Page 3 BTS282Z E3230 Datasheet Page 4 BTS282Z E3230 Datasheet Page 5 BTS282Z E3230 Datasheet Page 6 BTS282Z E3230 Datasheet Page 7 BTS282Z E3230 Datasheet Page 8 BTS282Z E3230 Datasheet Page 9 BTS282Z E3230 Datasheet Page 10 BTS282Z E3230 Datasheet Page 11

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BTS282Z E3180A Specifications

ManufacturerInfineon Technologies
SeriesTEMPFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)49V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs6.5mOhm @ 36A, 10V
Vgs(th) (Max) @ Id2V @ 240µA
Gate Charge (Qg) (Max) @ Vgs232nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4800pF @ 25V
FET FeatureTemperature Sensing Diode
Power Dissipation (Max)300W (Tc)
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO220-7-180
Package / CaseTO-263-8, D²Pak (7 Leads + Tab), TO-263CA

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