Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

BUK653R2-55C,127

BUK653R2-55C,127

For Reference Only

Part Number BUK653R2-55C,127
PNEDA Part # BUK653R2-55C-127
Description MOSFET N-CH 55V 120A TO220AB
Manufacturer NXP
Unit Price Request a Quote
In Stock 2,178
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 14 - May 19 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BUK653R2-55C Resources

Brand NXP
ECAD Module ECAD
Mfr. Part NumberBUK653R2-55C,127
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • BUK653R2-55C,127 Datasheet
  • where to find BUK653R2-55C,127
  • NXP

  • NXP BUK653R2-55C,127
  • BUK653R2-55C,127 PDF Datasheet
  • BUK653R2-55C,127 Stock

  • BUK653R2-55C,127 Pinout
  • Datasheet BUK653R2-55C,127
  • BUK653R2-55C,127 Supplier

  • NXP Distributor
  • BUK653R2-55C,127 Price
  • BUK653R2-55C,127 Distributor

BUK653R2-55C Specifications

ManufacturerNXP USA Inc.
SeriesTrenchMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs3.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs258nC @ 10V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds15300pF @ 25V
FET Feature-
Power Dissipation (Max)306W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

The Products You May Be Interested In

IPP90R500C3

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

900V

Current - Continuous Drain (Id) @ 25°C

11A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

500mOhm @ 6.6A, 10V

Vgs(th) (Max) @ Id

3.5V @ 740µA

Gate Charge (Qg) (Max) @ Vgs

68nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1700pF @ 100V

FET Feature

-

Power Dissipation (Max)

156W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3

Package / Case

TO-220-3

CPH3348-TL-W

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

70mOhm @ 1.5A, 4.5V

Vgs(th) (Max) @ Id

1.4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

5.6nC @ 4.5V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

405pF @ 6V

FET Feature

-

Power Dissipation (Max)

1W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

3-CPH

Package / Case

TO-236-3, SC-59, SOT-23-3

DMN6069SFG-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

5.6A (Ta), 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

50mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1480pF @ 30V

FET Feature

-

Power Dissipation (Max)

930mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerDI3333-8

Package / Case

8-PowerVDFN

SPD07N60C3

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

7.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

600mOhm @ 4.6A, 10V

Vgs(th) (Max) @ Id

3.9V @ 350µA

Gate Charge (Qg) (Max) @ Vgs

27nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

790pF @ 25V

FET Feature

-

Power Dissipation (Max)

83W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-3

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Manufacturer

NXP USA Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

22A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

51mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

11nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

633pF @ 12V

FET Feature

-

Power Dissipation (Max)

56W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Recently Sold

MAX6315US31D3+T

MAX6315US31D3+T

Maxim Integrated

IC RESET CIRCUIT 3.08V SOT143-4

MT40A512M16LY-075:E

MT40A512M16LY-075:E

Micron Technology Inc.

IC DRAM 8G PARALLEL 1.33GHZ

LT8609SEV#PBF

LT8609SEV#PBF

Linear Technology/Analog Devices

IC REG BUCK ADJUSTABLE 2A 16LQFN

G5LE-14 DC12

G5LE-14 DC12

Omron Electronics Inc-EMC Div

RELAY GEN PURPOSE SPDT 10A 12V

SC2596SETRT

SC2596SETRT

Semtech

IC REG LDO DDR 1OUT 8SOIC

MAX15006AATT/V+T

MAX15006AATT/V+T

Maxim Integrated

IC REG LINEAR 3.3V 50MA 6TDFN

FSA5157L6X

FSA5157L6X

ON Semiconductor

IC SWITCH SPDT 6MICROPAK

ADG3304BRUZ

ADG3304BRUZ

Analog Devices

IC TRNSLTR BIDIRECTIONAL 14TSSOP

2873000202

2873000202

Fair-Rite Products

FERRITE CORE MULTI-APERTURE

S25FL208K0RMFI041

S25FL208K0RMFI041

Cypress Semiconductor

IC FLASH 8M SPI 76MHZ 8SOIC

MAX3100EEE

MAX3100EEE

Maxim Integrated

IC UART SPI/MICRWIRE COMP 16QSOP

MBR140SFT1G

MBR140SFT1G

ON Semiconductor

DIODE SCHOTTKY 40V 1A SOD123L