Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

BUK6D43-40PX

BUK6D43-40PX

For Reference Only

Part Number BUK6D43-40PX
PNEDA Part # BUK6D43-40PX
Description MOSFET P-CH 40V 6A 6DFN2020MD
Manufacturer Nexperia
Unit Price Request a Quote
In Stock 133,872
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BUK6D43-40PX Resources

Brand Nexperia
ECAD Module ECAD
Mfr. Part NumberBUK6D43-40PX
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BUK6D43-40PX, BUK6D43-40PX Datasheet (Total Pages: 2, Size: 653.19 KB)
PDFBUK6D43-40PX Datasheet Cover
BUK6D43-40PX Datasheet Page 2

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • BUK6D43-40PX Datasheet
  • where to find BUK6D43-40PX
  • Nexperia

  • Nexperia BUK6D43-40PX
  • BUK6D43-40PX PDF Datasheet
  • BUK6D43-40PX Stock

  • BUK6D43-40PX Pinout
  • Datasheet BUK6D43-40PX
  • BUK6D43-40PX Supplier

  • Nexperia Distributor
  • BUK6D43-40PX Price
  • BUK6D43-40PX Distributor

BUK6D43-40PX Specifications

ManufacturerNexperia USA Inc.
SeriesAutomotive, AEC-Q101
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs43mOhm @ 6A, 10V
Vgs(th) (Max) @ Id2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs36nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1260pF @ 20V
FET Feature-
Power Dissipation (Max)15W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDFN2020MD-6
Package / Case6-UDFN Exposed Pad

The Products You May Be Interested In

BSD214SNH6327XTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

1.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

140mOhm @ 1.5A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 3.7µA

Gate Charge (Qg) (Max) @ Vgs

0.8nC @ 5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

143pF @ 10V

FET Feature

-

Power Dissipation (Max)

500mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-SOT363-6

Package / Case

6-VSSOP, SC-88, SOT-363

ZVNL120C

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

180mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

3V, 5V

Rds On (Max) @ Id, Vgs

10Ohm @ 250mA, 5V

Vgs(th) (Max) @ Id

1.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

85pF @ 25V

FET Feature

-

Power Dissipation (Max)

700mW (Ta)

Operating Temperature

-

Mounting Type

Through Hole

Supplier Device Package

TO-92-3

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

IRLHM630TRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

21A (Ta), 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 10V

Rds On (Max) @ Id, Vgs

3.5mOhm @ 20A, 4.5V

Vgs(th) (Max) @ Id

1.1V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

62nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

3170pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.7W (Ta), 37W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PQFN (3x3)

Package / Case

8-VQFN Exposed Pad

IPW60R160C6FKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

23.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

160mOhm @ 11.3A, 10V

Vgs(th) (Max) @ Id

3.5V @ 750µA

Gate Charge (Qg) (Max) @ Vgs

75nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1660pF @ 100V

FET Feature

-

Power Dissipation (Max)

176W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO247-3

Package / Case

TO-247-3

APTC80DA15T1G

Microsemi

Manufacturer

Microsemi Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

28A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

150mOhm @ 14A, 10V

Vgs(th) (Max) @ Id

3.9V @ 2mA

Gate Charge (Qg) (Max) @ Vgs

180nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

4507pF @ 25V

FET Feature

-

Power Dissipation (Max)

277W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SP1

Package / Case

SP1

Recently Sold

GP10J-E3/54

GP10J-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO204AL

PIC18F2455-I/SO

PIC18F2455-I/SO

Microchip Technology

IC MCU 8BIT 24KB FLASH 28SOIC

W25Q256JVFIQ

W25Q256JVFIQ

Winbond Electronics

IC FLASH 256M SPI 133MHZ 16SOIC

ATMEGA32A-AU

ATMEGA32A-AU

Microchip Technology

IC MCU 8BIT 32KB FLASH 44TQFP

MC9S12HZ256VAL

MC9S12HZ256VAL

NXP

IC MCU 16BIT 256KB FLASH 112LQFP

AT90S1200-12SC

AT90S1200-12SC

Microchip Technology

IC MCU 8BIT 1KB FLASH 20SOIC

LT1120ACS8#PBF

LT1120ACS8#PBF

Linear Technology/Analog Devices

IC REG LIN POS ADJ 125MA 8SOIC

AT28C16-15TC

AT28C16-15TC

Microchip Technology

IC EEPROM 16K PARALLEL 28TSOP

M29W640FB70N6E

M29W640FB70N6E

Micron Technology Inc.

IC FLASH 64M PARALLEL 48TSOP

PCF8575TS/1,112

PCF8575TS/1,112

NXP

IC I/O EXPANDER I2C 16B 24SSOP

VUB72-12NOXT

VUB72-12NOXT

IXYS

BRIDGE RECT 3P 1.2KV 75A V1A-PAK

SI9706DY-T1-E3

SI9706DY-T1-E3

Vishay Siliconix

IC PCMCIA INTFACE SW 8SO