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BUK761R3-30E,118

BUK761R3-30E,118

For Reference Only

Part Number BUK761R3-30E,118
PNEDA Part # BUK761R3-30E-118
Description MOSFET N-CH 30V 120A D2PAK
Manufacturer NXP
Unit Price Request a Quote
In Stock 4,464
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BUK761R3-30E Resources

Brand NXP
ECAD Module ECAD
Mfr. Part NumberBUK761R3-30E,118
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BUK761R3-30E, BUK761R3-30E Datasheet (Total Pages: 15, Size: 511.4 KB)
PDFBUK761R3-30E Datasheet Cover
BUK761R3-30E Datasheet Page 2 BUK761R3-30E Datasheet Page 3 BUK761R3-30E Datasheet Page 4 BUK761R3-30E Datasheet Page 5 BUK761R3-30E Datasheet Page 6 BUK761R3-30E Datasheet Page 7 BUK761R3-30E Datasheet Page 8 BUK761R3-30E Datasheet Page 9 BUK761R3-30E Datasheet Page 10 BUK761R3-30E Datasheet Page 11

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BUK761R3-30E Specifications

ManufacturerNXP USA Inc.
SeriesTrenchMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs154nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds11960pF @ 25V
FET Feature-
Power Dissipation (Max)357W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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