Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

BUK7C3R1-80EJ

BUK7C3R1-80EJ

For Reference Only

Part Number BUK7C3R1-80EJ
PNEDA Part # BUK7C3R1-80EJ
Description MOSFET N-CH 80V 200A D2PAK-7
Manufacturer NXP
Unit Price Request a Quote
In Stock 2,304
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 8 - May 13 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BUK7C3R1-80EJ Resources

Brand NXP
ECAD Module ECAD
Mfr. Part NumberBUK7C3R1-80EJ
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • BUK7C3R1-80EJ Datasheet
  • where to find BUK7C3R1-80EJ
  • NXP

  • NXP BUK7C3R1-80EJ
  • BUK7C3R1-80EJ PDF Datasheet
  • BUK7C3R1-80EJ Stock

  • BUK7C3R1-80EJ Pinout
  • Datasheet BUK7C3R1-80EJ
  • BUK7C3R1-80EJ Supplier

  • NXP Distributor
  • BUK7C3R1-80EJ Price
  • BUK7C3R1-80EJ Distributor

BUK7C3R1-80EJ Specifications

ManufacturerNXP USA Inc.
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting TypeSurface Mount
Supplier Device PackageD2PAK-7
Package / CaseTO-263-7, D²Pak (6 Leads + Tab), TO-263CB

The Products You May Be Interested In

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

14A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

750mOhm @ 7A, 10V

Vgs(th) (Max) @ Id

5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

170nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4500pF @ 25V

FET Feature

-

Power Dissipation (Max)

360W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247AD (IXFH)

Package / Case

TO-247-3

BSZ42DN25NS3GATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

425mOhm @ 2.5A, 10V

Vgs(th) (Max) @ Id

4V @ 13µA

Gate Charge (Qg) (Max) @ Vgs

5.5nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

430pF @ 100V

FET Feature

-

Power Dissipation (Max)

33.8W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TSDSON-8

Package / Case

8-PowerTDFN

IRF7820TRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

3.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

78mOhm @ 2.2A, 10V

Vgs(th) (Max) @ Id

5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

44nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1750pF @ 100V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

BS250P

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

45V

Current - Continuous Drain (Id) @ 25°C

230mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

14Ohm @ 200mA, 10V

Vgs(th) (Max) @ Id

3.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

60pF @ 10V

FET Feature

-

Power Dissipation (Max)

700mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

E-Line (TO-92 compatible)

Package / Case

E-Line-3

FQP17P10

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

16.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

190mOhm @ 8.25A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

39nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1100pF @ 25V

FET Feature

-

Power Dissipation (Max)

100W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

Recently Sold

FIN1019MTCX

FIN1019MTCX

ON Semiconductor

IC TRANSCEIVER FULL 1/1 14TSSOP

SP0502BAHTG

SP0502BAHTG

Littelfuse

TVS DIODE 5.5V 8.5V SOT23-3

TAJD227K010RNJ

TAJD227K010RNJ

CAP TANT 220UF 10% 10V 2917

MAX6817EUT+T

MAX6817EUT+T

Maxim Integrated

IC DEBOUNCER SWITCH DUAL SOT23-6

USBLC6-2SC6

USBLC6-2SC6

STMicroelectronics

TVS DIODE 5.25V 17V SOT23-6

MT29F8G16ABACAWP:C

MT29F8G16ABACAWP:C

Micron Technology Inc.

IC FLASH 8G PARALLEL 48TSOP I

CDRH124NP-100MC

CDRH124NP-100MC

Sumida

FIXED IND 10UH 4.5A 28 MOHM SMD

MAX9814ETD+T

MAX9814ETD+T

Maxim Integrated

IC AMP AUDIO MONO AB MIC 14TDFN

MT25QL128ABA8ESF-0SIT

MT25QL128ABA8ESF-0SIT

Micron Technology Inc.

IC FLASH 128M SPI 133MHZ 16SOP2

HCPL-060L-000E

HCPL-060L-000E

Broadcom

OPTOISO 3.75KV OPN COLLECTOR 8SO

H1102NL

H1102NL

Pulse Electronics Network

MODULE XFRMR SGL ETHR LAN 16SOIC

ST16C2552IJ44TR-F

ST16C2552IJ44TR-F

MaxLinear, Inc.

IC UART FIFO 16B DUAL 44PLCC