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BUK7E4R0-80E,127

BUK7E4R0-80E,127

For Reference Only

Part Number BUK7E4R0-80E,127
PNEDA Part # BUK7E4R0-80E-127
Description MOSFET N-CH 80V 120A I2PAK
Manufacturer NXP
Unit Price Request a Quote
In Stock 5,184
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 20 - May 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BUK7E4R0-80E Resources

Brand NXP
ECAD Module ECAD
Mfr. Part NumberBUK7E4R0-80E,127
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BUK7E4R0-80E, BUK7E4R0-80E Datasheet (Total Pages: 14, Size: 231.45 KB)
PDFBUK7E4R0-80E Datasheet Cover
BUK7E4R0-80E Datasheet Page 2 BUK7E4R0-80E Datasheet Page 3 BUK7E4R0-80E Datasheet Page 4 BUK7E4R0-80E Datasheet Page 5 BUK7E4R0-80E Datasheet Page 6 BUK7E4R0-80E Datasheet Page 7 BUK7E4R0-80E Datasheet Page 8 BUK7E4R0-80E Datasheet Page 9 BUK7E4R0-80E Datasheet Page 10 BUK7E4R0-80E Datasheet Page 11

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BUK7E4R0-80E Specifications

ManufacturerNXP USA Inc.
SeriesTrenchMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs169nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds12030pF @ 25V
FET Feature-
Power Dissipation (Max)349W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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