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BUK956R1-100E,127

BUK956R1-100E,127

For Reference Only

Part Number BUK956R1-100E,127
PNEDA Part # BUK956R1-100E-127
Description MOSFET N-CH 100V 120A TO220AB
Manufacturer NXP
Unit Price Request a Quote
In Stock 3,526
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BUK956R1-100E Resources

Brand NXP
ECAD Module ECAD
Mfr. Part NumberBUK956R1-100E,127
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BUK956R1-100E, BUK956R1-100E Datasheet (Total Pages: 14, Size: 329.37 KB)
PDFBUK956R1-100E Datasheet Cover
BUK956R1-100E Datasheet Page 2 BUK956R1-100E Datasheet Page 3 BUK956R1-100E Datasheet Page 4 BUK956R1-100E Datasheet Page 5 BUK956R1-100E Datasheet Page 6 BUK956R1-100E Datasheet Page 7 BUK956R1-100E Datasheet Page 8 BUK956R1-100E Datasheet Page 9 BUK956R1-100E Datasheet Page 10 BUK956R1-100E Datasheet Page 11

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BUK956R1-100E Specifications

ManufacturerNXP USA Inc.
SeriesTrenchMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs5.9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs133nC @ 5V
Vgs (Max)±10V
Input Capacitance (Ciss) (Max) @ Vds17460pF @ 25V
FET Feature-
Power Dissipation (Max)349W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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