Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

BUK9612-55B,118

BUK9612-55B,118

For Reference Only

Part Number BUK9612-55B,118
PNEDA Part # BUK9612-55B-118
Description MOSFET N-CH 55V 75A D2PAK
Manufacturer Nexperia
Unit Price Request a Quote
In Stock 102,786
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 17 - May 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BUK9612-55B Resources

Brand Nexperia
ECAD Module ECAD
Mfr. Part NumberBUK9612-55B,118
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BUK9612-55B, BUK9612-55B Datasheet (Total Pages: 14, Size: 972.31 KB)
PDFBUK9612-55B Datasheet Cover
BUK9612-55B Datasheet Page 2 BUK9612-55B Datasheet Page 3 BUK9612-55B Datasheet Page 4 BUK9612-55B Datasheet Page 5 BUK9612-55B Datasheet Page 6 BUK9612-55B Datasheet Page 7 BUK9612-55B Datasheet Page 8 BUK9612-55B Datasheet Page 9 BUK9612-55B Datasheet Page 10 BUK9612-55B Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • BUK9612-55B,118 Datasheet
  • where to find BUK9612-55B,118
  • Nexperia

  • Nexperia BUK9612-55B,118
  • BUK9612-55B,118 PDF Datasheet
  • BUK9612-55B,118 Stock

  • BUK9612-55B,118 Pinout
  • Datasheet BUK9612-55B,118
  • BUK9612-55B,118 Supplier

  • Nexperia Distributor
  • BUK9612-55B,118 Price
  • BUK9612-55B,118 Distributor

BUK9612-55B Specifications

ManufacturerNexperia USA Inc.
SeriesAutomotive, AEC-Q101, TrenchMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs10mOhm @ 25A, 10V
Vgs(th) (Max) @ Id2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs31nC @ 5V
Vgs (Max)±15V
Input Capacitance (Ciss) (Max) @ Vds3693pF @ 25V
FET Feature-
Power Dissipation (Max)157W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

BSC028N06NSATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

23A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

2.8mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

2.8V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

37nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2700pF @ 30V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 83W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TDSON-8-7

Package / Case

8-PowerTDFN

STW200NF03

STMicroelectronics

Manufacturer

STMicroelectronics

Series

STripFET™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.8mOhm @ 60A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

280nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

10000pF @ 25V

FET Feature

-

Power Dissipation (Max)

350W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-3

Package / Case

TO-247-3

IPP057N06N3GXKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

5.7mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

4V @ 58µA

Gate Charge (Qg) (Max) @ Vgs

82nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6600pF @ 30V

FET Feature

-

Power Dissipation (Max)

115W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3

Package / Case

TO-220-3

2N6661JTXP02

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

90V

Current - Continuous Drain (Id) @ 25°C

860mA (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

4Ohm @ 1A, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

50pF @ 25V

FET Feature

-

Power Dissipation (Max)

725mW (Ta), 6.25W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-39

Package / Case

TO-205AD, TO-39-3 Metal Can

IXFT20N60Q

IXYS

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

350mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

4.5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

90nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

3300pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-268

Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Recently Sold

MCP73862T-I/SL

MCP73862T-I/SL

Microchip Technology

IC LI-ION CTRLR 8.2/8.4V 16SOIC

74HC4066D

74HC4066D

Toshiba Semiconductor and Storage

IC SWITCH QUAD 14SOIC

NR6045T100M

NR6045T100M

Taiyo Yuden

FIXED IND 10UH 2.5A 61.1 MOHM

LT3012EFE#PBF

LT3012EFE#PBF

Linear Technology/Analog Devices

IC REG LIN POS ADJ 250MA 16TSSOP

EPCS4SI8N

EPCS4SI8N

Intel

IC CONFIG DEVICE 4MBIT 8SOIC

IRFU9024NPBF

IRFU9024NPBF

Infineon Technologies

MOSFET P-CH 55V 11A I-PAK

MC68HC908GR8CFA

MC68HC908GR8CFA

NXP

IC MCU 8BIT 7.5KB FLASH 32LQFP

MTFC4GACAJCN-4M IT

MTFC4GACAJCN-4M IT

Micron Technology Inc.

IC FLASH 32G MMC 153VFBGA

7443551130

7443551130

Wurth Electronics

FIXED IND 1.3UH 25A 1.8 MOHM SMD

STM32F030R8T6TR

STM32F030R8T6TR

STMicroelectronics

IC MCU 32BIT 64KB FLASH 64LQFP

MAX3237EAI+T

MAX3237EAI+T

Maxim Integrated

IC TRANSCEIVER FULL 5/3 28SSOP

VO14642AABTR

VO14642AABTR

Vishay Semiconductor Opto Division

SSR RELAY SPST-NO 2A 0-60V