Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

BUK98180-100A,115

BUK98180-100A,115

For Reference Only

Part Number BUK98180-100A,115
PNEDA Part # BUK98180-100A-115
Description MOSFET N-CH 100V 4.6A SOT-223
Manufacturer NXP
Unit Price Request a Quote
In Stock 4,014
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 10 - May 15 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BUK98180-100A Resources

Brand NXP
ECAD Module ECAD
Mfr. Part NumberBUK98180-100A,115
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BUK98180-100A, BUK98180-100A Datasheet (Total Pages: 12, Size: 711.85 KB)
PDFBUK98180-100A Datasheet Cover
BUK98180-100A Datasheet Page 2 BUK98180-100A Datasheet Page 3 BUK98180-100A Datasheet Page 4 BUK98180-100A Datasheet Page 5 BUK98180-100A Datasheet Page 6 BUK98180-100A Datasheet Page 7 BUK98180-100A Datasheet Page 8 BUK98180-100A Datasheet Page 9 BUK98180-100A Datasheet Page 10 BUK98180-100A Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • BUK98180-100A,115 Datasheet
  • where to find BUK98180-100A,115
  • NXP

  • NXP BUK98180-100A,115
  • BUK98180-100A,115 PDF Datasheet
  • BUK98180-100A,115 Stock

  • BUK98180-100A,115 Pinout
  • Datasheet BUK98180-100A,115
  • BUK98180-100A,115 Supplier

  • NXP Distributor
  • BUK98180-100A,115 Price
  • BUK98180-100A,115 Distributor

BUK98180-100A Specifications

ManufacturerNXP USA Inc.
SeriesAutomotive, AEC-Q101, TrenchMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs173mOhm @ 5A, 10V
Vgs(th) (Max) @ Id2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±10V
Input Capacitance (Ciss) (Max) @ Vds619pF @ 25V
FET Feature-
Power Dissipation (Max)8W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-223
Package / CaseTO-261-4, TO-261AA

The Products You May Be Interested In

RSE002N06TL

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

250mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 10V

Rds On (Max) @ Id, Vgs

2.4Ohm @ 250mA, 10V

Vgs(th) (Max) @ Id

2.3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

15pF @ 25V

FET Feature

-

Power Dissipation (Max)

150mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

EMT3

Package / Case

SC-75, SOT-416

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

170A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

13mOhm @ 85A, 10V

Vgs(th) (Max) @ Id

5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

434nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

27000pF @ 25V

FET Feature

-

Power Dissipation (Max)

1170W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SOT-227B

Package / Case

SOT-227-4, miniBLOC

BSP320SH6327XTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

SIPMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

2.9A (Tj)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

120mOhm @ 2.9A, 10V

Vgs(th) (Max) @ Id

4V @ 20µA

Gate Charge (Qg) (Max) @ Vgs

12nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

340pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.8W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-SOT223-4

Package / Case

TO-261-4, TO-261AA

NTMFS4C054NT3G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

22.5A (Ta), 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

2.54mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

32.5nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2300pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.59W (Ta), 33W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Package / Case

8-PowerTDFN, 5 Leads

IPI60R520CPAKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

6.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

520mOhm @ 3.8A, 10V

Vgs(th) (Max) @ Id

3.5V @ 340µA

Gate Charge (Qg) (Max) @ Vgs

31nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

630pF @ 100V

FET Feature

-

Power Dissipation (Max)

66W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO262-3

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Recently Sold

ADG406BPZ-REEL

ADG406BPZ-REEL

Analog Devices

IC MULTIPLEXER 16X1 28PLCC

OD-850FHT

OD-850FHT

Opto Diode Corp

EMITTER IR 850NM 100MA TO-46

ISL6269BCRZ

ISL6269BCRZ

Renesas Electronics America Inc.

IC REG CTRLR BUCK 16QFN

CD143A-SR70

CD143A-SR70

Bourns

TVS DIODE 7V SOT143

T495D477K006ATE125

T495D477K006ATE125

KEMET

CAP TANT 470UF 10% 6.3V 2917

TAJE107M025RNJ

TAJE107M025RNJ

CAP TANT 100UF 20% 25V 2917

IHLP2525CZER2R2M01

IHLP2525CZER2R2M01

Vishay Dale

FIXED IND 2.2UH 8A 20 MOHM SMD

DECB33J681KC4B

DECB33J681KC4B

Murata

CAP CER 680PF 6.3KV RADIAL

1N4148-P-TR

1N4148-P-TR

Vishay Semiconductor Diodes Division

DIODE GEN PURP 75V 2A DO35

AS5047D-ATSM

AS5047D-ATSM

ams

ROTARY ENCODER MAGNETIC PROG

CNY17F-2

CNY17F-2

Everlight Electronics Co Ltd

OPTOISOLTR 5KV TRANSISTOR 6-DIP

TR2/TCP1.25-R

TR2/TCP1.25-R

Eaton - Electronics Division

FUSE BRD MNT 1.25A 250VAC 2SMD