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BUK9E1R6-30E,127

BUK9E1R6-30E,127

For Reference Only

Part Number BUK9E1R6-30E,127
PNEDA Part # BUK9E1R6-30E-127
Description MOSFET N-CH 30V 120A I2PAK
Manufacturer NXP
Unit Price Request a Quote
In Stock 2,970
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 28 - Jul 3 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BUK9E1R6-30E Resources

Brand NXP
ECAD Module ECAD
Mfr. Part NumberBUK9E1R6-30E,127
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BUK9E1R6-30E, BUK9E1R6-30E Datasheet (Total Pages: 14, Size: 334.15 KB)
PDFBUK9E1R6-30E Datasheet Cover
BUK9E1R6-30E Datasheet Page 2 BUK9E1R6-30E Datasheet Page 3 BUK9E1R6-30E Datasheet Page 4 BUK9E1R6-30E Datasheet Page 5 BUK9E1R6-30E Datasheet Page 6 BUK9E1R6-30E Datasheet Page 7 BUK9E1R6-30E Datasheet Page 8 BUK9E1R6-30E Datasheet Page 9 BUK9E1R6-30E Datasheet Page 10 BUK9E1R6-30E Datasheet Page 11

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BUK9E1R6-30E Specifications

ManufacturerNXP USA Inc.
SeriesTrenchMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs1.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs113nC @ 5V
Vgs (Max)±10V
Input Capacitance (Ciss) (Max) @ Vds16150pF @ 25V
FET Feature-
Power Dissipation (Max)349W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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