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BUZ32 H

BUZ32 H

For Reference Only

Part Number BUZ32 H
PNEDA Part # BUZ32-H
Description MOSFET N-CH 200V 9.5A TO220-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,396
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BUZ32 H Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBUZ32 H
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BUZ32 H, BUZ32 H Datasheet (Total Pages: 10, Size: 402.94 KB)
PDFBUZ32 H Datasheet Cover
BUZ32 H Datasheet Page 2 BUZ32 H Datasheet Page 3 BUZ32 H Datasheet Page 4 BUZ32 H Datasheet Page 5 BUZ32 H Datasheet Page 6 BUZ32 H Datasheet Page 7 BUZ32 H Datasheet Page 8 BUZ32 H Datasheet Page 9 BUZ32 H Datasheet Page 10

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BUZ32 H Specifications

ManufacturerInfineon Technologies
SeriesSIPMOS®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C9.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs400mOhm @ 6A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds530pF @ 25V
FET Feature-
Power Dissipation (Max)75W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3
Package / CaseTO-220-3

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