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BUZ73HXKSA1

BUZ73HXKSA1

For Reference Only

Part Number BUZ73HXKSA1
PNEDA Part # BUZ73HXKSA1
Description MOSFET N-CH 200V 7A TO220-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,122
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BUZ73HXKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBUZ73HXKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BUZ73HXKSA1, BUZ73HXKSA1 Datasheet (Total Pages: 10, Size: 1,649.67 KB)
PDFBUZ73H3046XKSA1 Datasheet Cover
BUZ73H3046XKSA1 Datasheet Page 2 BUZ73H3046XKSA1 Datasheet Page 3 BUZ73H3046XKSA1 Datasheet Page 4 BUZ73H3046XKSA1 Datasheet Page 5 BUZ73H3046XKSA1 Datasheet Page 6 BUZ73H3046XKSA1 Datasheet Page 7 BUZ73H3046XKSA1 Datasheet Page 8 BUZ73H3046XKSA1 Datasheet Page 9 BUZ73H3046XKSA1 Datasheet Page 10

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BUZ73HXKSA1 Specifications

ManufacturerInfineon Technologies
SeriesSIPMOS®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs400mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds530pF @ 25V
FET Feature-
Power Dissipation (Max)40W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3
Package / CaseTO-220-3

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