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BYG10M-E3/TR

BYG10M-E3/TR

For Reference Only

Part Number BYG10M-E3/TR
PNEDA Part # BYG10M-E3-TR
Description DIODE AVALANCHE 1KV 1.5A
Manufacturer Vishay Semiconductor Diodes Division
Unit Price Request a Quote
In Stock 771,582
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 17 - Jun 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BYG10M-E3/TR Resources

Brand Vishay Semiconductor Diodes Division
ECAD Module ECAD
Mfr. Part NumberBYG10M-E3/TR
CategorySemiconductorsDiodes & RectifiersRectifiers - Single
Datasheet
BYG10M-E3/TR, BYG10M-E3/TR Datasheet (Total Pages: 5, Size: 100.2 KB)
PDFBYG10MHE3_A/I Datasheet Cover
BYG10MHE3_A/I Datasheet Page 2 BYG10MHE3_A/I Datasheet Page 3 BYG10MHE3_A/I Datasheet Page 4 BYG10MHE3_A/I Datasheet Page 5

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BYG10M-E3/TR Specifications

ManufacturerVishay Semiconductor Diodes Division
Series-
Diode TypeAvalanche
Voltage - DC Reverse (Vr) (Max)1000V
Current - Average Rectified (Io)1.5A
Voltage - Forward (Vf) (Max) @ If1.15V @ 1.5A
SpeedStandard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)4µs
Current - Reverse Leakage @ Vr1µA @ 1000V
Capacitance @ Vr, F-
Mounting TypeSurface Mount
Package / CaseDO-214AC, SMA
Supplier Device PackageDO-214AC (SMA)
Operating Temperature - Junction-55°C ~ 150°C

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