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CDBGBSC201200-G

CDBGBSC201200-G

For Reference Only

Part Number CDBGBSC201200-G
PNEDA Part # CDBGBSC201200-G
Description DIODE DUAL SILICON CARBIDE POWER
Manufacturer Comchip Technology
Unit Price Request a Quote
In Stock 6,390
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

CDBGBSC201200-G Resources

Brand Comchip Technology
ECAD Module ECAD
Mfr. Part NumberCDBGBSC201200-G
CategorySemiconductorsDiodes & RectifiersRectifiers - Arrays

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CDBGBSC201200-G Specifications

ManufacturerComchip Technology
Series-
Diode Configuration1 Pair Common Cathode
Diode TypeSilicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)1200V
Current - Average Rectified (Io) (per Diode)25.9A (DC)
Voltage - Forward (Vf) (Max) @ If1.8V @ 10A
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0ns
Current - Reverse Leakage @ Vr100µA @ 1200V
Operating Temperature - Junction-55°C ~ 175°C
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247

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