CDBGBSC20650-G
For Reference Only
| Part Number | CDBGBSC20650-G |
| PNEDA Part # | CDBGBSC20650-G |
| Description | DIODE DUAL SILICON CARBIDE POWER |
| Manufacturer | Comchip Technology |
| Unit Price | Request a Quote |
| In Stock | 8,442 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 17 - Jun 22 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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CDBGBSC20650-G Resources
| Brand | Comchip Technology |
| ECAD Module |
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| Mfr. Part Number | CDBGBSC20650-G |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Arrays |
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
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- Orders cannot be canceled after shipping the packages.
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CDBGBSC20650-G Specifications
| Manufacturer | Comchip Technology |
| Series | - |
| Diode Configuration | 1 Pair Common Cathode |
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650V |
| Current - Average Rectified (Io) (per Diode) | 33A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.7V @ 10A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0ns |
| Current - Reverse Leakage @ Vr | 100µA @ 650V |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247 |
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