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CEN1107 APM

CEN1107 APM

For Reference Only

Part Number CEN1107 APM
PNEDA Part # CEN1107-APM
Description TRANSISTOR NPN
Manufacturer Central Semiconductor Corp
Unit Price Request a Quote
In Stock 7,524
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 18 - Jun 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

CEN1107 APM Resources

Brand Central Semiconductor Corp
ECAD Module ECAD
Mfr. Part NumberCEN1107 APM
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - RF

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CEN1107 APM Specifications

ManufacturerCentral Semiconductor Corp
Series-
Transistor Type-
Voltage - Collector Emitter Breakdown (Max)-
Frequency - Transition-
Noise Figure (dB Typ @ f)-
Gain-
Power - Max-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Current - Collector (Ic) (Max)-
Operating Temperature-
Mounting Type-
Package / Case-
Supplier Device Package-

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Gain

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DC Current Gain (hFE) (Min) @ Ic, Vce

75 @ 30mA, 3V

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Supplier Device Package

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Series

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Frequency - Transition

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Noise Figure (dB Typ @ f)

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Gain

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Power - Max

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Current - Collector (Ic) (Max)

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Operating Temperature

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Toshiba Semiconductor and Storage

Manufacturer

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Series

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Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

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Noise Figure (dB Typ @ f)

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Gain

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Power - Max

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Current - Collector (Ic) (Max)

15mA

Operating Temperature

125°C (TJ)

Mounting Type

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Package / Case

SC-70, SOT-323

Supplier Device Package

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ON Semiconductor

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Series

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Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

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Gain

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Power - Max

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Supplier Device Package

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