Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

CSD13306WT

CSD13306WT

For Reference Only

Part Number CSD13306WT
PNEDA Part # CSD13306WT
Description MOSFET N-CH 12V 6DSBGA
Manufacturer Texas Instruments
Unit Price Request a Quote
In Stock 24,594
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 2 - May 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

CSD13306WT Resources

Brand Texas Instruments
ECAD Module ECAD
Mfr. Part NumberCSD13306WT
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • CSD13306WT Datasheet
  • where to find CSD13306WT
  • Texas Instruments

  • Texas Instruments CSD13306WT
  • CSD13306WT PDF Datasheet
  • CSD13306WT Stock

  • CSD13306WT Pinout
  • Datasheet CSD13306WT
  • CSD13306WT Supplier

  • Texas Instruments Distributor
  • CSD13306WT Price
  • CSD13306WT Distributor

CSD13306WT Specifications

Manufacturer
SeriesNexFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs10.2mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs11.2nC @ 4.5V
Vgs (Max)±10V
Input Capacitance (Ciss) (Max) @ Vds1370pF @ 6V
FET Feature-
Power Dissipation (Max)1.9W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-DSBGA (1x1.5)
Package / Case6-UFBGA, DSBGA

The Products You May Be Interested In

STH265N6F6-2AG

STMicroelectronics

Manufacturer

STMicroelectronics

Series

Automotive, AEC-Q101, STripFET™ F6

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

180A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.1mOhm @ 60A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

183nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

11800pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

H2Pak-2

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

DMG2302UK-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

2.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

90mOhm @ 3.6A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

2.8nC @ 10V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

130pF @ 10V

FET Feature

-

Power Dissipation (Max)

660mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23

Package / Case

TO-236-3, SC-59, SOT-23-3

IRLI640G

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

9.9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4V, 5V

Rds On (Max) @ Id, Vgs

180mOhm @ 5.9A, 5V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

66nC @ 10V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

1800pF @ 25V

FET Feature

-

Power Dissipation (Max)

40W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3 Full Pack, Isolated Tab

NVMFS5C673NLWFAFT3G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

9.2mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

2V @ 35µA

Gate Charge (Qg) (Max) @ Vgs

9.5nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

880pF @ 25V

FET Feature

-

Power Dissipation (Max)

46W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Package / Case

8-PowerTDFN, 5 Leads

IPP90R1K0C3XK

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

900V

Current - Continuous Drain (Id) @ 25°C

5.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1Ohm @ 3.3A, 10V

Vgs(th) (Max) @ Id

3.5V @ 370µA

Gate Charge (Qg) (Max) @ Vgs

34nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

850pF @ 100V

FET Feature

-

Power Dissipation (Max)

89W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3-1

Package / Case

TO-220-3

Recently Sold

LPC2388FBD144,551

LPC2388FBD144,551

NXP

IC MCU 32BIT 512KB FLASH 144LQFP

SMBJ10A

SMBJ10A

Taiwan Semiconductor Corporation

TVS DIODE 10V 17V DO214AA

ADUM1100ARZ

ADUM1100ARZ

Analog Devices

DGTL ISO 2.5KV GEN PURP 8SOIC

MAX9910EXK+T

MAX9910EXK+T

Maxim Integrated

IC OPAMP GP 1 CIRCUIT SC70-5

SQJ423EP-T1_GE3

SQJ423EP-T1_GE3

Vishay Siliconix

MOSFET P-CH 40V 55A POWERPAKSO-8

AP2111MPG-13

AP2111MPG-13

Diodes Incorporated

IC USB SWITCH 2.45A CURR 8MSOP

MPXM2010GS

MPXM2010GS

NXP

SENS PRESSURE 1.45 PSI MAX MPAK

EC3SA-12S15N

EC3SA-12S15N

Cincon Electronics Co. LTD

ISOLATED DC/DC CONVERTERS 2.31-3

BAT54-7-F

BAT54-7-F

Diodes Incorporated

DIODE SCHOTTKY 30V 200MA SOT23-3

SF-1206S400-2

SF-1206S400-2

Bourns

FUSE BOARD MOUNT 4A 32VDC 1206

FA-20H 16.0000MF10Z-AJ0

FA-20H 16.0000MF10Z-AJ0

EPSON

CRYSTAL 16.0000MHZ 8PF SMD

MAX3224EEAP+T

MAX3224EEAP+T

Maxim Integrated

IC TRANSCEIVER FULL 2/2 20SSOP