CSD16322Q5
For Reference Only
| Part Number | CSD16322Q5 |
| PNEDA Part # | CSD16322Q5 |
| Description | MOSFET N-CH 25V 5X6 8SON |
| Manufacturer | Texas Instruments |
| Unit Price | Request a Quote |
| In Stock | 22,038 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 10 - May 15 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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CSD16322Q5 Resources
| Brand | Texas Instruments |
| ECAD Module |
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| Mfr. Part Number | CSD16322Q5 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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CSD16322Q5 Specifications
| Manufacturer | |
| Series | NexFET™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 21A (Ta), 97A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 3V, 8V |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 20A, 8V |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 9.7nC @ 4.5V |
| Vgs (Max) | +10V, -8V |
| Input Capacitance (Ciss) (Max) @ Vds | 1365pF @ 12.5V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-VSON-CLIP (5x6) |
| Package / Case | 8-PowerTDFN |
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Manufacturer Alpha & Omega Semiconductor Inc. Series AlphaMOS FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 18A (Ta), 46A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 5mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1333pF @ 15V FET Feature - Power Dissipation (Max) 2.5W (Ta), 50W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252, (D-Pak) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 50V Current - Continuous Drain (Id) @ 25°C 16A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4V, 5V Rds On (Max) @ Id, Vgs 47mOhm @ 16A, 5V Vgs(th) (Max) @ Id 2V @ 250mA Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 60W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252AA Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer Infineon Technologies Series HEXFET®, StrongIRFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 240A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 0.75mOhm @ 100A, 10V Vgs(th) (Max) @ Id 3.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs 460nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 13975pF @ 25V FET Feature - Power Dissipation (Max) 375W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK (7-Lead) Package / Case TO-263-7, D²Pak (6 Leads + Tab) |
