CSD16322Q5C
For Reference Only
| Part Number | CSD16322Q5C |
| PNEDA Part # | CSD16322Q5C |
| Description | MOSFET N-CH 25V 97A 8SON |
| Manufacturer | Texas Instruments |
| Unit Price | Request a Quote |
| In Stock | 8,172 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 2 - May 7 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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CSD16322Q5C Resources
| Brand | Texas Instruments |
| ECAD Module |
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| Mfr. Part Number | CSD16322Q5C |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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CSD16322Q5C Specifications
| Manufacturer | |
| Series | NexFET™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 21A (Ta), 97A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 3V, 8V |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 20A, 8V |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 9.7nC @ 4.5V |
| Vgs (Max) | +10V, -8V |
| Input Capacitance (Ciss) (Max) @ Vds | 1365pF @ 12.5V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SON |
| Package / Case | 8-PowerTDFN |
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Manufacturer Taiwan Semiconductor Corporation Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 26mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 19.5nC @ 4.5V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 1670pF @ 15V FET Feature - Power Dissipation (Max) 1.56W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-26 Package / Case SOT-23-6 |
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