CSD17309Q3
For Reference Only
| Part Number | CSD17309Q3 |
| PNEDA Part # | CSD17309Q3 |
| Description | MOSFET N-CH 30V 60A 8SON |
| Manufacturer | Texas Instruments |
| Unit Price | Request a Quote |
| In Stock | 42,330 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 17 - Jun 22 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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CSD17309Q3 Resources
| Brand | Texas Instruments |
| ECAD Module |
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| Mfr. Part Number | CSD17309Q3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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CSD17309Q3 Specifications
| Manufacturer | |
| Series | NexFET™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta), 60A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 3V, 8V |
| Rds On (Max) @ Id, Vgs | 5.4mOhm @ 18A, 8V |
| Vgs(th) (Max) @ Id | 1.7V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 4.5V |
| Vgs (Max) | +10V, -8V |
| Input Capacitance (Ciss) (Max) @ Vds | 1440pF @ 15V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-VSON-CLIP (3.3x3.3) |
| Package / Case | 8-PowerTDFN |
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Manufacturer Infineon Technologies Series SIPMOS® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 230mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 0V, 10V Rds On (Max) @ Id, Vgs 3.5Ohm @ 160mA, 10V Vgs(th) (Max) @ Id 2.4V @ 26µA Gate Charge (Qg) (Max) @ Vgs 1.4nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 39pF @ 25V FET Feature Depletion Mode Power Dissipation (Max) 360mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 Package / Case TO-236-3, SC-59, SOT-23-3 |
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