CSD17313Q2Q1
For Reference Only
| Part Number | CSD17313Q2Q1 |
| PNEDA Part # | CSD17313Q2Q1 |
| Description | MOSFET N-CH 30V 5A 6SON |
| Manufacturer | Texas Instruments |
| Unit Price | Request a Quote |
| In Stock | 43,104 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 5 - May 10 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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CSD17313Q2Q1 Resources
| Brand | Texas Instruments |
| ECAD Module |
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| Mfr. Part Number | CSD17313Q2Q1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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CSD17313Q2Q1 Specifications
| Manufacturer | |
| Series | Automotive, AEC-Q100, NexFET™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 3V, 8V |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 4A, 8V |
| Vgs(th) (Max) @ Id | 1.8V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 2.7nC @ 4.5V |
| Vgs (Max) | +10V, -8V |
| Input Capacitance (Ciss) (Max) @ Vds | 340pF @ 15V |
| FET Feature | - |
| Power Dissipation (Max) | 2.3W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-WSON (2x2) |
| Package / Case | 6-WDFN Exposed Pad |
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Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 50V Current - Continuous Drain (Id) @ 25°C 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 7.5Ohm @ 50mA, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 1.4nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6.2pF @ 10V FET Feature - Power Dissipation (Max) 150mW (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 3-MCP Package / Case SC-70, SOT-323 |
