Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

CSD23202W10T

CSD23202W10T

For Reference Only

Part Number CSD23202W10T
PNEDA Part # CSD23202W10T
Description MOSFET P-CH 12V 2.2A 4DSBGA
Manufacturer Texas Instruments
Unit Price Request a Quote
In Stock 173,814
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

CSD23202W10T Resources

Brand Texas Instruments
ECAD Module ECAD
Mfr. Part NumberCSD23202W10T
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • CSD23202W10T Datasheet
  • where to find CSD23202W10T
  • Texas Instruments

  • Texas Instruments CSD23202W10T
  • CSD23202W10T PDF Datasheet
  • CSD23202W10T Stock

  • CSD23202W10T Pinout
  • Datasheet CSD23202W10T
  • CSD23202W10T Supplier

  • Texas Instruments Distributor
  • CSD23202W10T Price
  • CSD23202W10T Distributor

CSD23202W10T Specifications

Manufacturer
SeriesNexFET™
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Rds On (Max) @ Id, Vgs53mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs3.8nC @ 4.5V
Vgs (Max)-6V
Input Capacitance (Ciss) (Max) @ Vds512pF @ 6V
FET Feature-
Power Dissipation (Max)1W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package4-DSBGA (1x1)
Package / Case4-UFBGA, DSBGA

The Products You May Be Interested In

BSP295E6327

Infineon Technologies

Manufacturer

Infineon Technologies

Series

SIPMOS®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

1.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

300mOhm @ 1.8A, 10V

Vgs(th) (Max) @ Id

1.8V @ 400µA

Gate Charge (Qg) (Max) @ Vgs

17nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

368pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.8W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-SOT223-4

Package / Case

TO-261-4, TO-261AA

NIF9N05CLT1

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

52V

Current - Continuous Drain (Id) @ 25°C

2.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

3V, 10V

Rds On (Max) @ Id, Vgs

125mOhm @ 2.6A, 10V

Vgs(th) (Max) @ Id

2.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

7nC @ 4.5V

Vgs (Max)

±15V

Input Capacitance (Ciss) (Max) @ Vds

250pF @ 35V

FET Feature

-

Power Dissipation (Max)

1.69W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-223

Package / Case

TO-261-4, TO-261AA

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

1.4mOhm @ 25A, 5V

Vgs(th) (Max) @ Id

2.1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

113nC @ 5V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

16150pF @ 25V

FET Feature

-

Power Dissipation (Max)

357W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

FDB86360_SN00307

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101, PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

110A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.8mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

253nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

14600pF @ 25V

FET Feature

-

Power Dissipation (Max)

333W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

DMP6110SVTQ-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

Automotive, AEC-Q101

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

7.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

105mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

17.2nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

969pF @ 30V

FET Feature

-

Power Dissipation (Max)

1.8W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TSOT-26

Package / Case

SOT-23-6 Thin, TSOT-23-6

Recently Sold

FDV301N

FDV301N

ON Semiconductor

MOSFET N-CH 25V 220MA SOT-23

S34ML02G104TFI010

S34ML02G104TFI010

SkyHigh Memory Limited

IC FLASH 2G PARALLEL 48TSOP I

P170SP1-FC15AR10K

P170SP1-FC15AR10K

TT Electronics/BI

POT 10K OHM 1/20W PLASTIC LOG

MT29F4G08ABADAH4-IT:D

MT29F4G08ABADAH4-IT:D

Micron Technology Inc.

IC FLASH 4G PARALLEL 63VFBGA

TAJE687K006RNJ

TAJE687K006RNJ

CAP TANT 680UF 10% 6.3V 2917

BC846B

BC846B

ON Semiconductor

TRANS NPN 65V 0.1A SOT-23

SMBJ26A-E3/52

SMBJ26A-E3/52

Vishay Semiconductor Diodes Division

TVS DIODE 26V 42.1V DO214AA

CM2009-00QR

CM2009-00QR

ON Semiconductor

VGA PORT COMPANION-65 OHM QSOP16

MAX1686HEUA+T

MAX1686HEUA+T

Maxim Integrated

IC REG CHARG PUMP SIM 1OUT 8UMAX

74HC74A

74HC74A

MICROSS/On Semiconductor

IC FF D-TYPE DUAL DIE

C0805C102K2GECAUTO

C0805C102K2GECAUTO

KEMET

CAP CER 0805 1NF 200V C0G 10%

AD8505ARJZ-R7

AD8505ARJZ-R7

Analog Devices

IC OPAMP GP 1 CIRCUIT SOT23-5