Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

CSD25303W1015

CSD25303W1015

For Reference Only

Part Number CSD25303W1015
PNEDA Part # CSD25303W1015
Description MOSFET P-CH 20V 3A 6DSBGA
Manufacturer Texas Instruments
Unit Price Request a Quote
In Stock 8,442
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 23 - May 28 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

CSD25303W1015 Resources

Brand Texas Instruments
ECAD Module ECAD
Mfr. Part NumberCSD25303W1015
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • CSD25303W1015 Datasheet
  • where to find CSD25303W1015
  • Texas Instruments

  • Texas Instruments CSD25303W1015
  • CSD25303W1015 PDF Datasheet
  • CSD25303W1015 Stock

  • CSD25303W1015 Pinout
  • Datasheet CSD25303W1015
  • CSD25303W1015 Supplier

  • Texas Instruments Distributor
  • CSD25303W1015 Price
  • CSD25303W1015 Distributor

CSD25303W1015 Specifications

Manufacturer
SeriesNexFET™
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs58mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs4.3nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds435pF @ 10V
FET Feature-
Power Dissipation (Max)1.5W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-DSBGA (1x1.5)
Package / Case6-UFBGA, DSBGA

The Products You May Be Interested In

C2M1000170J-TR

Cree/Wolfspeed

Manufacturer

Cree/Wolfspeed

Series

C2M™

FET Type

N-Channel

Technology

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss)

1700V

Current - Continuous Drain (Id) @ 25°C

5.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

20V

Rds On (Max) @ Id, Vgs

1.4Ohm @ 2A, 20V

Vgs(th) (Max) @ Id

3.1V @ 500µA (Typ)

Gate Charge (Qg) (Max) @ Vgs

13nC @ 20V

Vgs (Max)

+25V, -10V

Input Capacitance (Ciss) (Max) @ Vds

200pF @ 1000V

FET Feature

-

Power Dissipation (Max)

78W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK-7

Package / Case

TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

AO4466

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

10A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

23mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8.6nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

448pF @ 15V

FET Feature

-

Power Dissipation (Max)

3.1W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOIC

Package / Case

8-SOIC (0.154", 3.90mm Width)

FCH041N60F

ON Semiconductor

Manufacturer

ON Semiconductor

Series

SuperFET® II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

76A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

41mOhm @ 38A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

360nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

14365pF @ 100V

FET Feature

-

Power Dissipation (Max)

595W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-3

Package / Case

TO-247-3

NTB65N02RG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

65A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

8.2mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

9.5nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1330pF @ 20V

FET Feature

-

Power Dissipation (Max)

1.04W (Ta), 62.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SI7464DP-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

1.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

240mOhm @ 2.8A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.8W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8

Recently Sold

BNX025H01L

BNX025H01L

Murata

FILTER LC 10UF SMD

CG0603MLC-05LE

CG0603MLC-05LE

Bourns

VARISTOR 0603

ADM3222ARSZ

ADM3222ARSZ

Analog Devices

IC TRANSCEIVER FULL 2/2 20SSOP

HIH-5030-001

HIH-5030-001

Honeywell Sensing and Productivity Solutions

SENSOR HUMIDITY 5V ANALOG 3% SMD

AD7938BSUZ-6REEL7

AD7938BSUZ-6REEL7

Analog Devices

IC ADC 12BIT SAR 32TQFP

CP2102-GM

CP2102-GM

Silicon Labs

IC USB-TO-UART BRIDGE 28VQFN

LTST-C190KGKT

LTST-C190KGKT

Lite-On Inc.

LED GREEN CLEAR CHIP SMD

TDA7267A

TDA7267A

STMicroelectronics

IC AMP AUDIO 3W MONO AB 16DIP

5CEBA9F27C7N

5CEBA9F27C7N

Intel

IC FPGA 336 I/O 672FBGA

AD5293BRUZ-20

AD5293BRUZ-20

Analog Devices

IC DGT POT 20KOHM 1024TP 14TSSOP

B340A-E3/61T

B340A-E3/61T

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 3A DO214AC

VS-30BQ060TRPBF

VS-30BQ060TRPBF

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 3A SMC