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CTLDM8002A-M621H TR

CTLDM8002A-M621H TR

For Reference Only

Part Number CTLDM8002A-M621H TR
PNEDA Part # CTLDM8002A-M621H-TR
Description MOSFET N-CH 50V DFN6
Manufacturer Central Semiconductor Corp
Unit Price Request a Quote
In Stock 4,644
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 7 - May 12 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

CTLDM8002A-M621H TR Resources

Brand Central Semiconductor Corp
ECAD Module ECAD
Mfr. Part NumberCTLDM8002A-M621H TR
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
CTLDM8002A-M621H TR, CTLDM8002A-M621H TR Datasheet (Total Pages: 5, Size: 985.1 KB)
PDFCTLDM8002A-M621H TR Datasheet Cover
CTLDM8002A-M621H TR Datasheet Page 2 CTLDM8002A-M621H TR Datasheet Page 3 CTLDM8002A-M621H TR Datasheet Page 4 CTLDM8002A-M621H TR Datasheet Page 5

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CTLDM8002A-M621H TR Specifications

ManufacturerCentral Semiconductor Corp
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)50V
Current - Continuous Drain (Id) @ 25°C280mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs2.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs0.72nC @ 4.5V
Vgs (Max)20V
Input Capacitance (Ciss) (Max) @ Vds70pF @ 25V
FET Feature-
Power Dissipation (Max)1.6W (Ta)
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTLM621H
Package / Case6-XFDFN Exposed Pad

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