CUS10S30,H3F
For Reference Only
| Part Number | CUS10S30,H3F |
| PNEDA Part # | CUS10S30-H3F |
| Description | DIODE SCHOTTKY 30V 1A USC |
| Manufacturer | Toshiba Semiconductor and Storage |
| Unit Price | Request a Quote |
| In Stock | 987,474 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 5 - May 10 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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CUS10S30 Resources
| Brand | Toshiba Semiconductor and Storage |
| ECAD Module |
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| Mfr. Part Number | CUS10S30,H3F |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
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CUS10S30 Specifications
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | - |
| Diode Type | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 30V |
| Current - Average Rectified (Io) | 1A |
| Voltage - Forward (Vf) (Max) @ If | 230mV @ 100mA |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 500µA @ 30V |
| Capacitance @ Vr, F | 135pF @ 0V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | SC-76, SOD-323 |
| Supplier Device Package | USC |
| Operating Temperature - Junction | 125°C (Max) |
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Manufacturer Microsemi Corporation Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 400V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 1.3V @ 3A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 5µs Current - Reverse Leakage @ Vr 1µA @ 400V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case A, Axial Supplier Device Package - Operating Temperature - Junction -65°C ~ 175°C |
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