CY14B116N-BA25XI
For Reference Only
| Part Number | CY14B116N-BA25XI | ||||||||||||||||||
| PNEDA Part # | CY14B116N-BA25XI | ||||||||||||||||||
| Description | IC NVSRAM 16M PARALLEL | ||||||||||||||||||
| Manufacturer | Cypress Semiconductor | ||||||||||||||||||
| Unit Price |
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| In Stock | 2,177 | ||||||||||||||||||
| Warehouses | Shipped from Hong Kong SAR | ||||||||||||||||||
| Estimated Delivery | Jun 23 - Jun 28 (Choose Expedited Shipping) | ||||||||||||||||||
| Guarantee | Up to 1 year [PNEDA-Warranty]* | ||||||||||||||||||
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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CY14B116N-BA25XI Resources
| Brand | Cypress Semiconductor |
| ECAD Module |
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| Mfr. Part Number | CY14B116N-BA25XI |
| Category | Semiconductors › Memory ICs › Memory |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
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- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
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CY14B116N-BA25XI Specifications
| Manufacturer | Cypress Semiconductor Corp |
| Series | - |
| Memory Type | Non-Volatile |
| Memory Format | NVSRAM |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Size | 16Mb (1M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | - |
| Write Cycle Time - Word, Page | 25ns |
| Access Time | 25ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 60-LFBGA |
| Supplier Device Package | 60-FBGA (10x18) |
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Manufacturer Micron Technology Inc. Series - Memory Type Volatile Memory Format DRAM Technology DRAM Memory Size 576Mb (64M x 9) Memory Interface Parallel Clock Frequency 400MHz Write Cycle Time - Word, Page - Access Time 20ns Voltage - Supply 1.7V ~ 1.9V Operating Temperature 0°C ~ 95°C (TC) Mounting Type Surface Mount Package / Case 144-TFBGA Supplier Device Package 144-µBGA (18.5x11) |
