CY7C1011G30-12ZSXET
For Reference Only
| Part Number | CY7C1011G30-12ZSXET |
| PNEDA Part # | CY7C1011G30-12ZSXET |
| Description | IC SRAM 2M PARALLEL 44TSOP II |
| Manufacturer | Cypress Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 4,590 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 18 - May 23 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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CY7C1011G30-12ZSXET Resources
| Brand | Cypress Semiconductor |
| ECAD Module |
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| Mfr. Part Number | CY7C1011G30-12ZSXET |
| Category | Semiconductors › Memory ICs › Memory |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
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- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
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CY7C1011G30-12ZSXET Specifications
| Manufacturer | Cypress Semiconductor Corp |
| Series | - |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Asynchronous |
| Memory Size | 2Mb (128K x 16) |
| Memory Interface | Parallel |
| Clock Frequency | - |
| Write Cycle Time - Word, Page | 10ns |
| Access Time | 10ns |
| Voltage - Supply | 2.2V ~ 3.6V |
| Operating Temperature | -40°C ~ 125°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 44-TSOP (0.400", 10.16mm Width) |
| Supplier Device Package | 44-TSOP II |
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Manufacturer Cypress Semiconductor Corp Series - Memory Type Non-Volatile Memory Format NVSRAM Technology NVSRAM (Non-Volatile SRAM) Memory Size 16Mb (2M x 8, 1M x 16) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page 30ns Access Time - Voltage - Supply 1.7V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 165-LBGA Supplier Device Package 165-FBGA (15x17) |
