CY7C1414TV18-250BZC
For Reference Only
| Part Number | CY7C1414TV18-250BZC |
| PNEDA Part # | CY7C1414TV18-250BZC |
| Description | IC SRAM 36M PARALLEL 165FBGA |
| Manufacturer | Cypress Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 8,874 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 25 - Jun 30 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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CY7C1414TV18-250BZC Resources
| Brand | Cypress Semiconductor |
| ECAD Module |
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| Mfr. Part Number | CY7C1414TV18-250BZC |
| Category | Semiconductors › Memory ICs › Memory |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
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- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
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CY7C1414TV18-250BZC Specifications
| Manufacturer | Cypress Semiconductor Corp |
| Series | - |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Synchronous, QDR II |
| Memory Size | 36Mb (1M x 36) |
| Memory Interface | Parallel |
| Clock Frequency | 250MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | - |
| Voltage - Supply | 1.7V ~ 1.9V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 165-LBGA |
| Supplier Device Package | 165-FBGA (13x15) |
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Manufacturer IDT, Integrated Device Technology Inc Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Synchronous, SDR Memory Size 4.5Mb (128K x 36) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page - Access Time 8ns Voltage - Supply 3.135V ~ 3.465V Operating Temperature 0°C ~ 70°C (TA) Mounting Type Surface Mount Package / Case 165-TBGA Supplier Device Package 165-CABGA (13x15) |
