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DDTC113ZUA-7

DDTC113ZUA-7

For Reference Only

Part Number DDTC113ZUA-7
PNEDA Part # DDTC113ZUA-7
Description TRANS PREBIAS NPN 200MW SOT323
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 5,544
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 1 - May 6 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

DDTC113ZUA-7 Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberDDTC113ZUA-7
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Single, Pre-Biased
Datasheet
DDTC113ZUA-7, DDTC113ZUA-7 Datasheet (Total Pages: 7, Size: 437.15 KB)
PDFDDTC143XUA-7 Datasheet Cover
DDTC143XUA-7 Datasheet Page 2 DDTC143XUA-7 Datasheet Page 3 DDTC143XUA-7 Datasheet Page 4 DDTC143XUA-7 Datasheet Page 5 DDTC143XUA-7 Datasheet Page 6 DDTC143XUA-7 Datasheet Page 7

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DDTC113ZUA-7 Specifications

ManufacturerDiodes Incorporated
Series-
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)1 kOhms
Resistor - Emitter Base (R2)10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce33 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition250MHz
Power - Max200mW
Mounting TypeSurface Mount
Package / CaseSC-70, SOT-323
Supplier Device PackageSOT-323

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Current - Collector (Ic) (Max)

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Voltage - Collector Emitter Breakdown (Max)

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Resistor - Base (R1)

4.7 kOhms

Resistor - Emitter Base (R2)

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DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 10mA, 5V

Vce Saturation (Max) @ Ib, Ic

100mV @ 250µA, 5mA

Current - Collector Cutoff (Max)

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Frequency - Transition

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Power - Max

500mW

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Package / Case

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Voltage - Collector Emitter Breakdown (Max)

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Resistor - Base (R1)

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Resistor - Emitter Base (R2)

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DC Current Gain (hFE) (Min) @ Ic, Vce

160 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic

250mV @ 1mA, 10mA

Current - Collector Cutoff (Max)

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Frequency - Transition

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Power - Max

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Package / Case

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Supplier Device Package

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Manufacturer

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Series

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Transistor Type

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Current - Collector (Ic) (Max)

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Voltage - Collector Emitter Breakdown (Max)

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Resistor - Base (R1)

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Resistor - Emitter Base (R2)

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Vce Saturation (Max) @ Ib, Ic

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Current - Collector Cutoff (Max)

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Frequency - Transition

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Power - Max

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Package / Case

SC-70, SOT-323

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Diodes Incorporated

Series

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Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

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Voltage - Collector Emitter Breakdown (Max)

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Resistor - Base (R1)

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Resistor - Emitter Base (R2)

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DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 1mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 5mA

Current - Collector Cutoff (Max)

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Frequency - Transition

250MHz

Power - Max

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Mounting Type

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Package / Case

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Supplier Device Package

SOT-23-3

Manufacturer

NXP USA Inc.

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

500mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

2.2 kOhms

Resistor - Emitter Base (R2)

2.2 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

40 @ 50mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 2.5mA, 50mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

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Power - Max

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Mounting Type

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Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

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