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DMG3415UFY4Q-7

DMG3415UFY4Q-7

For Reference Only

Part Number DMG3415UFY4Q-7
PNEDA Part # DMG3415UFY4Q-7
Description MOSFET P-CH 16V 2.5A X2-DFN2015
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 47,088
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

DMG3415UFY4Q-7 Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberDMG3415UFY4Q-7
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
DMG3415UFY4Q-7, DMG3415UFY4Q-7 Datasheet (Total Pages: 6, Size: 376.55 KB)
PDFDMG3415UFY4Q-7 Datasheet Cover
DMG3415UFY4Q-7 Datasheet Page 2 DMG3415UFY4Q-7 Datasheet Page 3 DMG3415UFY4Q-7 Datasheet Page 4 DMG3415UFY4Q-7 Datasheet Page 5 DMG3415UFY4Q-7 Datasheet Page 6

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DMG3415UFY4Q-7 Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)16V
Current - Continuous Drain (Id) @ 25°C2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs39mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs10nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds282pF @ 10V
FET Feature-
Power Dissipation (Max)650mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageX2-DFN2015-3
Package / Case3-XDFN

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