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DMG4N60SK3-13

DMG4N60SK3-13

For Reference Only

Part Number DMG4N60SK3-13
PNEDA Part # DMG4N60SK3-13
Description MOSFET BVDSS: 501V 650V TO252 T&
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 6,282
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

DMG4N60SK3-13 Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberDMG4N60SK3-13
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
DMG4N60SK3-13, DMG4N60SK3-13 Datasheet (Total Pages: 8, Size: 375.59 KB)
PDFDMG4N60SK3-13 Datasheet Cover
DMG4N60SK3-13 Datasheet Page 2 DMG4N60SK3-13 Datasheet Page 3 DMG4N60SK3-13 Datasheet Page 4 DMG4N60SK3-13 Datasheet Page 5 DMG4N60SK3-13 Datasheet Page 6 DMG4N60SK3-13 Datasheet Page 7 DMG4N60SK3-13 Datasheet Page 8

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DMG4N60SK3-13 Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C3.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.3Ohm @ 2A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs14.3nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds532pF @ 25V
FET Feature-
Power Dissipation (Max)48W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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