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DMG6601LVT-7

DMG6601LVT-7

For Reference Only

Part Number DMG6601LVT-7
PNEDA Part # DMG6601LVT-7
Description MOSFET N/P-CH 30V 26TSOT
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 1,256,124
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 30 - May 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

DMG6601LVT-7 Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberDMG6601LVT-7
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
DMG6601LVT-7, DMG6601LVT-7 Datasheet (Total Pages: 9, Size: 382.59 KB)
PDFDMG6601LVT-7 Datasheet Cover
DMG6601LVT-7 Datasheet Page 2 DMG6601LVT-7 Datasheet Page 3 DMG6601LVT-7 Datasheet Page 4 DMG6601LVT-7 Datasheet Page 5 DMG6601LVT-7 Datasheet Page 6 DMG6601LVT-7 Datasheet Page 7 DMG6601LVT-7 Datasheet Page 8 DMG6601LVT-7 Datasheet Page 9

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DMG6601LVT-7 Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C3.8A, 2.5A
Rds On (Max) @ Id, Vgs55mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds422pF @ 15V
Power - Max850mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device PackageTSOT-26

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