Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

DMG9N65CTI

DMG9N65CTI

For Reference Only

Part Number DMG9N65CTI
PNEDA Part # DMG9N65CTI
Description MOSFET N CH 650V 9A ITO-220AB
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 7,416
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 24 - Jun 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

DMG9N65CTI Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberDMG9N65CTI
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
DMG9N65CTI, DMG9N65CTI Datasheet (Total Pages: 5, Size: 432.72 KB)
PDFDMG9N65CTI Datasheet Cover
DMG9N65CTI Datasheet Page 2 DMG9N65CTI Datasheet Page 3 DMG9N65CTI Datasheet Page 4 DMG9N65CTI Datasheet Page 5

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • DMG9N65CTI Datasheet
  • where to find DMG9N65CTI
  • Diodes Incorporated

  • Diodes Incorporated DMG9N65CTI
  • DMG9N65CTI PDF Datasheet
  • DMG9N65CTI Stock

  • DMG9N65CTI Pinout
  • Datasheet DMG9N65CTI
  • DMG9N65CTI Supplier

  • Diodes Incorporated Distributor
  • DMG9N65CTI Price
  • DMG9N65CTI Distributor

DMG9N65CTI Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.3Ohm @ 4.5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs39nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2310pF @ 25V
FET Feature-
Power Dissipation (Max)13W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageITO-220AB
Package / CaseTO-220-3 Full Pack, Isolated Tab

The Products You May Be Interested In

NTB30N06LT4

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

30A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

5V

Rds On (Max) @ Id, Vgs

46mOhm @ 15A, 5V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

32nC @ 5V

Vgs (Max)

±15V

Input Capacitance (Ciss) (Max) @ Vds

1150pF @ 25V

FET Feature

-

Power Dissipation (Max)

88.2W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

FQA40N25

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

40A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

70mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

110nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

4000pF @ 25V

FET Feature

-

Power Dissipation (Max)

280W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3PN

Package / Case

TO-3P-3, SC-65-3

FDU8586

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

35A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5.5mOhm @ 35A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

48nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2480pF @ 10V

FET Feature

-

Power Dissipation (Max)

77W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

IXFT28N50Q

IXYS

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

28A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

200mOhm @ 14A, 10V

Vgs(th) (Max) @ Id

4.5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

94nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

3000pF @ 25V

FET Feature

-

Power Dissipation (Max)

375W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-268

Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

34A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

96mOhm @ 17A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

54nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

3000pF @ 25V

FET Feature

-

Power Dissipation (Max)

540W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-268HV

Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Recently Sold

T520B227M006ATE070

T520B227M006ATE070

KEMET

CAP TANT POLY 220UF 6.3V 3528

HX5401NL

HX5401NL

Pulse Electronics Network

XFRMR MODL 4PORT POE GIGABIT

BYV26C-TAP

BYV26C-TAP

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 600V 1A SOD57

PIC16F876-20/SO

PIC16F876-20/SO

Microchip Technology

IC MCU 8BIT 14KB FLASH 28SOIC

MMBTA05-TP

MMBTA05-TP

Micro Commercial Co

TRANS NPN 60V 0.5A SOT23

ERJ-M1WSJ15MU

ERJ-M1WSJ15MU

Panasonic Electronic Components

RES 0.015 OHM 5% 1W 2512

SZNUP2105LT1G

SZNUP2105LT1G

ON Semiconductor

TVS DIODE 24V 44V SOT23-3

PIC18F2331-I/SO

PIC18F2331-I/SO

Microchip Technology

IC MCU 8BIT 8KB FLASH 28SOIC

MAX3208EAUB+T

MAX3208EAUB+T

Maxim Integrated

TVS DIODE 10UMAX

C0805C102K2GECAUTO

C0805C102K2GECAUTO

KEMET

CAP CER 0805 1NF 200V C0G 10%

PIC18F2423-I/SO

PIC18F2423-I/SO

Microchip Technology

IC MCU 8BIT 16KB FLASH 28SOIC

LTC4365IDDB#TRMPBF

LTC4365IDDB#TRMPBF

Linear Technology/Analog Devices

IC OVERVOLTAGE PROTECT 8-DFN