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DMJ70H1D3SH3

DMJ70H1D3SH3

For Reference Only

Part Number DMJ70H1D3SH3
PNEDA Part # DMJ70H1D3SH3
Description MOSFET BVDSS: 651V 800V TO251
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 6,372
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 19 - Jun 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

DMJ70H1D3SH3 Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberDMJ70H1D3SH3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
DMJ70H1D3SH3, DMJ70H1D3SH3 Datasheet (Total Pages: 6, Size: 416.1 KB)
PDFDMJ70H1D3SH3 Datasheet Cover
DMJ70H1D3SH3 Datasheet Page 2 DMJ70H1D3SH3 Datasheet Page 3 DMJ70H1D3SH3 Datasheet Page 4 DMJ70H1D3SH3 Datasheet Page 5 DMJ70H1D3SH3 Datasheet Page 6

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DMJ70H1D3SH3 Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)700V
Current - Continuous Drain (Id) @ 25°C4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.3Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs13.9nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds351pF @ 50V
FET Feature-
Power Dissipation (Max)41W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-251
Package / CaseTO-251-3 Stub Leads, IPak

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