DMN1029UFDB-13
For Reference Only
| Part Number | DMN1029UFDB-13 |
| PNEDA Part # | DMN1029UFDB-13 |
| Description | MOSFET 2N-CH 12V 5.6A 6UDFN |
| Manufacturer | Diodes Incorporated |
| Unit Price | Request a Quote |
| In Stock | 8,766 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 14 - May 19 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
DMN1029UFDB-13 Resources
| Brand | Diodes Incorporated |
| ECAD Module |
|
| Mfr. Part Number | DMN1029UFDB-13 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- DMN1029UFDB-13 Datasheet
- where to find DMN1029UFDB-13
- Diodes Incorporated
- Diodes Incorporated DMN1029UFDB-13
- DMN1029UFDB-13 PDF Datasheet
- DMN1029UFDB-13 Stock
- DMN1029UFDB-13 Pinout
- Datasheet DMN1029UFDB-13
- DMN1029UFDB-13 Supplier
- Diodes Incorporated Distributor
- DMN1029UFDB-13 Price
- DMN1029UFDB-13 Distributor
DMN1029UFDB-13 Specifications
| Manufacturer | Diodes Incorporated |
| Series | - |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 5.6A |
| Rds On (Max) @ Id, Vgs | 29mOhm @ 5A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 19.6nC @ 8V |
| Input Capacitance (Ciss) (Max) @ Vds | 914pF @ 6V |
| Power - Max | 1.4W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-UDFN Exposed Pad |
| Supplier Device Package | U-DFN2020-6 (Type B) |
The Products You May Be Interested In
|
Manufacturer Toshiba Semiconductor and Storage Series - FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 180mA, 100mA Rds On (Max) @ Id, Vgs 3Ohm @ 50mA, 4V Vgs(th) (Max) @ Id 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 9.5pF @ 3V Power - Max 150mW Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-563, SOT-666 Supplier Device Package ES6 (1.6x1.6) |
Manufacturer Infineon Technologies Series HEXFET® FET Type 2 P-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 2.9A Rds On (Max) @ Id, Vgs 90mOhm @ 2.9A, 4.5V Vgs(th) (Max) @ Id 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 9.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 650pF @ 16V Power - Max 960mW Operating Temperature - Mounting Type Surface Mount Package / Case SOT-23-6 Thin, TSOT-23-6 Supplier Device Package 6-TSOP |
Manufacturer Vishay Siliconix Series Automotive, AEC-Q101, TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 20A, 60A Rds On (Max) @ Id, Vgs 6.5mOhm @ 15A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 975pF @ 6V Power - Max 27W, 48W Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® SO-8 Dual Supplier Device Package PowerPAK® SO-8 Dual Asymmetric |
Manufacturer Nexperia USA Inc. Series TrenchMOS™ FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 18.2A Rds On (Max) @ Id, Vgs 24mOhm @ 5A, 10V Vgs(th) (Max) @ Id 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs 6.3nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 701pF @ 25V Power - Max 32W Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case SOT-1205, 8-LFPAK56 Supplier Device Package LFPAK56D |
Manufacturer Infineon Technologies Series HEXFET® FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 10A Rds On (Max) @ Id, Vgs 13.4mOhm @ 10A, 10V Vgs(th) (Max) @ Id 2.55V @ 250µA Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 960pF @ 10V Power - Max 2W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
